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11.
公开(公告)号:US20230182342A1
公开(公告)日:2023-06-15
申请号:US17917138
申请日:2021-04-08
Applicant: UNIVERSITE DE LORRAINE , INSTITUT MINES TELECOM , UNIVERSITE LIBANAISE
Inventor: Nicolas BROSSE , Romain KAPEL , Rodolphe SONNIER , Roland EL HAGE , César SEGOVIA , Karina ANTOUN , Maria MOUSSA
CPC classification number: B27K3/0207 , B27K3/50 , B27K3/346 , B27K3/36 , B27K3/38
Abstract: A flame retardant treatment of a lignocellulosic material, which includes: optionally steam exploding the lignocellulosic material, impregnating the optionally steam-exploded lignocellulosic material, in or with an aqueous solution, from 0.5% to 10% of phytic acid and from 1% to 30% of urea, based on the total weight of the aqueous solution, optionally drying of the impregnated lignocellulosic material, until the impregnated lignocellulosic material has a moisture content from 5% to 20% by weight, cooking the impregnated and optionally dried lignocellulosic material, the resulting flame-retarded lignocellulosic material including a phosphorous content originating from the phytic acid from 0.1% to 10% by weight. Also, the resulting flame-retarded lignocellulosic material and the use thereof for manufacturing flame-retarded composite materials based on plant fibres, woven or nonwoven flame-retarded flexible materials based on plant fibres, and particularly textiles, flame-retarded materials based on wood fibres and/or on wood particles, and particularly flame-retarded wood panels.
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12.
公开(公告)号:US11515986B2
公开(公告)日:2022-11-29
申请号:US17042453
申请日:2019-03-20
Inventor: Marie-Rita Hojeij , Charbel Abdel Nour , Joumana Farah , Catherine Douillard
Abstract: A mechanism is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase, a first user is selected for a sub band, for example on the basis of a user priority. Users having complementary channel gains to that of the first user are identified, and then a second sub-band user maximizing a performance metric reflecting the achieved throughput, and/or fairness across users, is selected to accompany the first user on that sub-band. The initial assignment phase may terminate once all users have been assigned to a sub-band once. After the first phase is complete, the first user for each sub-band may be the user whose achieved total throughput is furthest from a target throughput defined for that user, wherein each user is assigned to the remaining sub-band to which no first user is currently attributed offering the highest channel gain for that user. Mechanisms for determining user priority, making provisional and definitive power allocations, and performance metrics are proposed.
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13.
公开(公告)号:US11323970B2
公开(公告)日:2022-05-03
申请号:US17042464
申请日:2019-03-20
Inventor: Marie-Rita Hojeij , Charbel Abdel Nour , Joumana Farah , Catherine Douillard
Abstract: A system and method for assigning users to a particular sub band in a given time slot in a NOMA system, where whichever pair of users corresponds to the smallest “candidate pair user throughput deviation value”, reflecting the aggregate of the respective difference between the average throughput across all users (K) and the known throughput of each of the two users under consideration (k1k2), and each user attributed to a sub-band other than the selected sub-band. User pairs for consideration may consider all possible pairs, or may be limited to candidate pairs satisfying together, or comprising one or both users who satisfy a criterion such as channel gain, distance to a target, throughput or a combination of some or all of these factors. The power allocated to each sub-band may be attributed by a waterfilling algorithm.
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公开(公告)号:US09831331B2
公开(公告)日:2017-11-28
申请号:US15028671
申请日:2014-10-10
Inventor: Frédéric Morancho , Saleem Hamady , Bilal Beydoun
IPC: H01L29/66 , H01L21/338 , H01L29/778 , H01L29/10 , H01L29/20
CPC classification number: H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66431 , H01L29/7783
Abstract: A heterojunction structure of semiconductor material, for a high electron mobility transistor includes a substrate, a buffer layer, arranged on the substrate, of a large bandgap semiconductor material, based on a nitride from column III, where the buffer layer is not intentionally doped with n-type carriers, a barrier layer arranged above the buffer layer, of a large bandgap semiconductor material based on a nitride from column III, where the width of the bandgap of the barrier layer is less than the width of the bandgap of the buffer layer. The heterojunction structure additionally comprises an intentionally doped area, of a material based on a nitride from column III identical to the material of the buffer layer, in a plane parallel to the plane of the substrate and a predefined thickness along a direction orthogonal to the plane of the substrate, where the area is comprised in the buffer layer.
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