公开(公告)号：US6099982A

公开(公告)日：2000-08-08

申请号：US966936

申请日：1997-11-10

Applicant: Katsuaki Okabe ,  Tsuyoshi Nishimura ,  Shinji Sato ,  Kohichiro Eshima ,  Kouki Toishi ,  Choju Nagata

Inventor： Katsuaki Okabe ,  Tsuyoshi Nishimura ,  Shinji Sato ,  Kohichiro Eshima ,  Kouki Toishi ,  Choju Nagata

IPC: C04B35/457 ,  C01G15/00 ,  C01G19/00 ,  C01G19/02 ,  C23C14/34

CPC classification number: C01G19/00 ,  C01G15/00 ,  C04B35/01 ,  C04B35/457 ,  C04B35/6263 ,  C04B35/62635 ,  C04B35/62655 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62695 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/443 ,  C04B2235/444 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5481 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/724 ,  C04B2235/77 ,  C04B2235/95

Abstract: The starting salts for ITO production, precipitant and the conditions for reaction, calcination, etc. are specified such as to synthesize a starting oxide adapted to be free from volatile components such as halides and lower oxides; the starting oxide is dispersed to particles having a specified flowability; the powder is pressed into a compact, which is sintered in either air atmosphere or an oxygen-rich atmosphere to produce a large and high-density sinter for use as an ITO sputtering target.

Abstract translation: 规定ITO的起始盐，沉淀剂，反应条件，煅烧等，以合成适合于不含挥发性成分如卤化物和低级氧化物的起始氧化物; 起始氧化物分散到具有特定流动性的颗粒中; 将粉末压制成在空气气氛或富氧气氛中烧结的压块，以产生用作ITO溅射靶的大型高密度烧结体。

公开(公告)号：USD311360S

公开(公告)日：1990-10-16

申请号：US62824

申请日：1987-06-15

Applicant: Humirou Yoshikawa ,  Tsuyoshi Nishimura ,  Syuhei Ueda

Designer： Humirou Yoshikawa ,  Tsuyoshi Nishimura ,  Syuhei Ueda

公开(公告)号：USD289390S

公开(公告)日：1987-04-21

申请号：US653738

申请日：1984-09-24

Applicant: Yutaka Ikeda ,  Tsuyoshi Nishimura

Designer： Yutaka Ikeda ,  Tsuyoshi Nishimura

公开(公告)号：USD354258S

公开(公告)日：1995-01-10

申请号：US7000

申请日：1993-04-13

Applicant: Yutaka Ikeda ,  David Marek ,  Tsuyoshi Nishimura ,  Masakazu Udagawa

Designer： Yutaka Ikeda ,  David Marek ,  Tsuyoshi Nishimura ,  Masakazu Udagawa

公开(公告)号：USD323799S

公开(公告)日：1992-02-11

申请号：US394422

申请日：1989-08-15

Applicant: Tsuyoshi Nishimura ,  Kunitoshi Murakami ,  Kunihiko Tachibana

Designer： Tsuyoshi Nishimura ,  Kunitoshi Murakami ,  Kunihiko Tachibana

公开(公告)号：USD298521S

公开(公告)日：1988-11-15

申请号：US804514

申请日：1985-12-04

Applicant: Yoshio Ui ,  Tsuyoshi Nishimura ,  Osamu Akimoto

Designer： Yoshio Ui ,  Tsuyoshi Nishimura ,  Osamu Akimoto

公开(公告)号：US20120294739A1

公开(公告)日：2012-11-22

申请号：US13519003

申请日：2011-02-16

Applicant: Tsuyoshi Nishimura ,  Teppei Hidekuma ,  Kazuhisa Morishita ,  Tsuyoshi Tokuda ,  Kazushige Nakamura ,  Hiroyuki Kayama

Inventor： Tsuyoshi Nishimura ,  Teppei Hidekuma ,  Kazuhisa Morishita ,  Tsuyoshi Tokuda ,  Kazushige Nakamura ,  Hiroyuki Kayama

IPC: F04B35/04 ,  F04D29/38

CPC classification number: F04D29/281 ,  A47L5/22 ,  F04D17/025

Abstract: An impeller of the present invention includes a front surface shroud including an air intake port; a back surface shroud provided facing the front surface shroud; a first inducer provided between the front surface shroud and the back surface shroud and including a plurality of first blade sections provided around a first hub portion; a second inducer including a plurality of second blade sections connected to the first blade section of the first inducer and provided around a second hub portion; and a plurality of blades connected to the second blade section of the second inducer. A multi-blade structure of the inducer thus can be realized, and an impeller of high performance and low noise can be provided.

Abstract translation: 本发明的叶轮具有包括进气口的前表面罩， 背面罩设置成面向前表面罩; 设置在所述前表面护罩和所述后表面护罩之间并且包括围绕第一毂部设置的多个第一叶片部分的第一诱导器; 第二导流器，包括多个第二叶片部分，其连接到第一导流器的第一叶片部分并设置在第二毂部分周围; 以及连接到所述第二导流器的第二叶片部分的多个叶片。 因此可以实现导流器的多叶片结构，并且可以提供高性能和低噪声的叶轮。

公开(公告)号：US20110063029A1

公开(公告)日：2011-03-17

申请号：US12727509

申请日：2010-03-19

Applicant: Akira Kumamoto ,  Tsuyoshi Nishimura ,  Chikashi Nakagawara ,  Masahiro Tamae

Inventor： Akira Kumamoto ,  Tsuyoshi Nishimura ,  Chikashi Nakagawara ,  Masahiro Tamae

IPC: H03F3/45

CPC classification number: H03F3/45475 ,  H03F3/45977 ,  H03F2203/45212 ,  H03F2203/45588 ,  H03F2203/45616

Abstract: A semiconductor integrated circuit includes a first input terminal configured to input a first input voltage, a second input terminal configured to input a second input voltage, a differential amplifier configured to generate a differential output voltage by amplifying a differential input voltage obtained from a difference between the first input voltage input by the first input terminal and the second input voltage input by the second input terminal, a switch configured to electrically connect or cut off the first input terminal and the second input terminal, and a sample hold unit connected to a power supply which generates a reference voltage and configured to generate an offset correction voltage of the differential amplifier based on the differential output voltage and the reference voltage when the first input terminal and the second input terminal are electrically connected by the switch.

Abstract translation: 半导体集成电路包括被配置为输入第一输入电压的第一输入端子和被配置为输入第二输入电压的第二输入端子，差分放大器，被配置为通过放大由差分输入电压 由第一输入端子输入的第一输入电压和由第二输入端子输入的第二输入电压，被配置为电连接或切断第一输入端子和第二输入端子的开关，以及连接到电力的采样保持单元 电源，其产生参考电压，并且被配置为当第一输入端子和第二输入端子通过开关电连接时，基于差分输出电压和参考电压产生差分放大器的偏移校正电压。

公开(公告)号：USD282918S

公开(公告)日：1986-03-11

申请号：US472624

申请日：1983-03-07

Applicant: Youzaburo Yamashita ,  Tsuyoshi Nishimura ,  Hijira Ohya

Designer： Youzaburo Yamashita ,  Tsuyoshi Nishimura ,  Hijira Ohya