公开(公告)号：US20140209857A1

公开(公告)日：2014-07-31

申请号：US14130345

申请日：2012-07-05

申请人： Takayoshi Takano ,  Takuya Mino ,  Norimichi Noguchi ,  Kenji Tsubaki ,  Hideki Hirayama

发明人： Takayoshi Takano ,  Takuya Mino ,  Norimichi Noguchi ,  Kenji Tsubaki ,  Hideki Hirayama

IPC分类号： H01L33/12 ,  H01L33/06 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32

摘要： In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

摘要翻译： 一种氮化物半导体发光元件的制造方法，包括：单晶基板; 和AlN层; 和第一导电类型的第一氮化物半导体层; 和由AlGaN基材料制成的发光层; 以及第二导电型的第二氮化物半导体层，形成所述AlN层的步骤包括：向所述反应器供给Al源气体和N源气体以产生具有Al- 极性是单晶衬底表面上的AlN层的一部分; 以及在第一步骤之后将Al源气体和N源气体供应到反应器中以形成AlN层的第二步骤。

公开(公告)号：US20130082297A1

公开(公告)日：2013-04-04

申请号：US13704679

申请日：2011-06-17

申请人： Norimichi Noguchi ,  Kenji Tsubaki ,  Takayoshi Takano

发明人： Norimichi Noguchi ,  Kenji Tsubaki ,  Takayoshi Takano

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46

摘要： An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.

摘要翻译： 紫外线半导体发光元件包括布置在n型氮化物半导体层和p型氮化物半导体层之间的发光层，与n型氮化物半导体层接触的n电极， 以及与p型氮化物半导体层接触的p电极。 p型氮化物半导体层具有p型接触层，该p型接触层的带隙比发光层的带隙小，与p电极欧姆接触。 在p型氮化物半导体层的面向发光层的表面的背面形成凹部，以避免形成有p电极的形成区域。 在凹陷部的内底面形成反射从发光层发出的紫外线的反射膜。

公开(公告)号：US07723739B2

公开(公告)日：2010-05-25

申请号：US11991418

申请日：2006-09-04

申请人： Takayoshi Takano ,  Yukihiro Kondo ,  Junji Ikeda ,  Hideki Hirayama

发明人： Takayoshi Takano ,  Yukihiro Kondo ,  Junji Ikeda ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

摘要： A semiconductor light emitting device includes an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.

摘要翻译： 半导体发光器件包括在单晶衬底1的一个表面侧上形成的用于通过第一缓冲层2外延生长的n型氮化物半导体层3，形成在n型表面侧的发射层5 氮化物半导体层3和形成在发光层5的表面侧的p型氮化物半导体层6.发光层5具有AlGaInN量子阱结构和具有与阻挡层相同的组成的第二缓冲层4 发光层5的5a设置在n型氮化物半导体层3和发光层5之间。在半导体发光器件中，与常规配置相比，可以增加紫外线辐射的发射强度，同时使用AlGaInN 作为发射层的材料。