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    Nitride semiconductor light-emitting devices
    12.
    发明授权
    Nitride semiconductor light-emitting devices 有权
    氮化物半导体发光器件

    公开(公告)号：US08541794B2

    公开(公告)日：2013-09-24

    申请号：US12570907

    申请日：2009-09-30

    Applicant: Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

    Inventor： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

    IPC: H01L33/04 ,  H01L33/32

    CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

    Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

    Abstract translation: 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

    LED with current confinement structure and surface roughening
    13.
    发明授权
    LED with current confinement structure and surface roughening 有权
    LED具有电流限制结构和表面粗糙化

    公开(公告)号：US08541788B2

    公开(公告)日：2013-09-24

    申请号：US12581759

    申请日：2009-10-19

    Applicant: Steven P. Denbaars ,  Shuji Nakamura ,  Max Batres

    Inventor： Steven P. Denbaars ,  Shuji Nakamura ,  Max Batres

    IPC: H01L27/15

    CPC classification number: H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

    Abstract: A light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a reflective layer adjacent the light emitting region of the diode. This light emitting diode includes a confinement structure. The confinement structure may be an opening in the reflective layer generally beneath the top ohmic contact that defines a non-contact area between the reflective layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. The LED may include roughened emitting surfaces to further enhance light extraction.

    Abstract translation: 具有在二极管的顶表面的部分上的欧姆接触的垂直取向的发光二极管和与二极管的发光区相邻的反射层。 该发光二极管包括限制结构。 约束结构可以是反射层中通常在顶部欧姆接触下方的开口，其限定反射层和二极管的发光区域之间的非接触区域，以促进除非接触之外的电流流动 面积又减少欧姆接触下方的发光复合数，并增加不在所述欧姆接触下方的区域中的发光复合数。 LED可以包括粗糙化的发射表面以进一步增强光提取。

    STORAGE SYSTEM HAVING A CHANNEL CONTROL FUNCTION USING A PLURALITY OF PROCESSORS
    15.
    发明申请
    STORAGE SYSTEM HAVING A CHANNEL CONTROL FUNCTION USING A PLURALITY OF PROCESSORS 有权
    具有多个处理器的通道控制功能的存储系统

    公开(公告)号：US20130159619A1

    公开(公告)日：2013-06-20

    申请号：US13688483

    申请日：2012-11-29

    Applicant: Shuji NAKAMURA ,  Akira FUJIBAYASHI ,  Matsumi HOSOYA

    Inventor： Shuji NAKAMURA ,  Akira FUJIBAYASHI ,  Matsumi HOSOYA

    IPC: G06F3/06

    CPC classification number: G06F3/0619 ,  G06F3/0613 ,  G06F3/0656 ,  G06F3/0658 ,  G06F3/0665 ,  G06F3/067 ,  G06F3/0676 ,  G06F3/0689 ,  H04L49/357 ,  H04L67/1002 ,  H04L67/1097 ,  H04L69/08

    Abstract: Host-connected storage system, including: channel adaptor with local router having processor and transfer list index/processor number information, and a protocol processor for host and router data exchange; and plural storage nodes each including a processor and disk drive and providing the disk drive to the host as a logical unit, wherein processor number information including logical unit and processor number of the node, wherein transfer list index/processor number information including processor number identifying the processor and index information identifying a transfer list including instruction sent to the protocol processor, wherein the router determines a first processor transfer destination of a write request via the processor number information on receiving the write request from the host through the protocol processor, wherein the first processor generates a first transfer list including processing instructed to the protocol processor, and first index information indexing the first transfer list on receiving the write request.

    Abstract translation: 主机连接存储系统，包括：具有处理器和传输列表索引/处理器号码信息的本地路由器的信道适配器，以及用于主机和路由器数据交换的协议处理器; 以及多个存储节点，每个存储节点包括处理器和磁盘驱动器，并且将磁盘驱动器提供给主机作为逻辑单元，其中处理器号码信息包括节点的逻辑单元和处理器号码，其中传输列表索引/处理器号信息包括处理器号码识别 所述处理器和索引信息标识包括发送到所述协议处理器的指令的传输列表，其中，所述路由器经由所述处理器号码信息确定所述写入请求的第一处理器传送目的地，所述处理器号码信息是通过所述协议处理器从所述主机接收所述写 第一处理器生成包括向协议处理器指示的处理的第一传送列表，以及在接收到写请求时首先索引索引第一传送列表的信息。

    Storage system and management method of its storage medium
    17.
    发明授权
    Storage system and management method of its storage medium 有权
    其存储介质的存储系统和管理方法

    公开(公告)号：US08402212B2

    公开(公告)日：2013-03-19

    申请号：US12105093

    申请日：2008-04-17

    Applicant: Shuji Nakamura ,  Makio Mizuno ,  Katsuya Tanaka

    Inventor： Shuji Nakamura ,  Makio Mizuno ,  Katsuya Tanaka

    IPC: G06F13/00

    CPC classification number: G06F3/0635 ,  G06F3/0617 ,  G06F3/067 ,  G06F3/0689 ,  G06F11/201 ,  G06F11/2056 ,  G06F11/2092

    Abstract: High availability is provided in a storage system that offers expandability more inexpensively. Provided is a storage system including multiple expanders to be connected to multiple storage mediums, multiple cascades connected respectively to a prescribed number of expanders among the multiple expanders, and multiple control units for respectively controlling the multiple cascades. One end of the multiple cascades is connected with an inter-cascade link, and the inter-cascade link has a logically connected state and a logically disconnected state.

    Abstract translation: 在可更便宜地提供可扩展性的存储系统中提供高可用性。 提供了一种存储系统，包括要连接到多个存储介质的多个扩展器，分别连接到多个扩展器中的规定数量的扩展器的多个级联，以及用于分别控制多个级联的多个控制单元。 多个级联的一端与级联链路相连，级联链路具有逻辑连接状态和逻辑断开状态。

    Collision detection sensor for vehicle
    18.
    发明授权
    Collision detection sensor for vehicle 有权

    公开(公告)号：US08368523B2

    公开(公告)日：2013-02-05

    申请号：US12218072

    申请日：2008-07-10

    Applicant: Hisashi Takahashi ,  Shuji Nakamura

    Inventor： Hisashi Takahashi ,  Shuji Nakamura

    IPC: B60Q1/00

    CPC classification number: B60R19/483 ,  B60R21/0136

    Abstract: A collision detection sensor includes an absorber, a chamber member, a pressure sensor, and a collision detection circuit. The absorber is deformed with a collision to absorb collision impact force. The absorber is located in a vehicle bumper and located in front of a bumper reinforcement in a vehicle front-rear direction. The chamber member defines a chamber room therein. The chamber member is located in the bumper and located in front of the bumper reinforcement in the vehicle front-rear direction. The pressure sensor detects pressure in the chamber room. The collision detection circuit detects the collision based on the detected pressure. A front end of the absorber is located further away from the bumper reinforcement than a front end of the chamber member in the vehicle front-rear direction.

    GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD
    19.
    发明申请
    GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD 审中-公开
    氮化钾块状晶体及其生长方法

    公开(公告)号：US20130022528A1

    公开(公告)日：2013-01-24

    申请号：US13592750

    申请日：2012-08-23

    Applicant: Tadao Hashimoto ,  Shuji Nakamura

    Inventor： Tadao Hashimoto ,  Shuji Nakamura

    IPC: C30B7/10 ,  C01B21/06

    CPC classification number: C30B29/406 ,  C30B7/10

    Abstract: A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

    Abstract translation: 具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积， 平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。 通过使用具有上部区域和下部区域的高压容器，通过与常规使用的温度和温度差更高的氨热法生长GaN本体晶体。 下部区域的温度为550℃以上，上部区域的温度为500℃以上，下部和上部区域之间的温度差保持在30℃以上。 使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。

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