公开(公告)号：US20090084988A1

公开(公告)日：2009-04-02

申请号：US11862810

申请日：2007-09-27

申请人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

发明人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

IPC分类号： G21K5/08

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/0815 ,  H01J2237/2001 ,  H01J2237/31703 ,  H01L21/67109 ,  H01L21/6831

摘要： An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300° C. to 600° C.

摘要翻译： 公开了一种离子注入机。 一个这样的离子注入机包括被配置为将氧，氮，氦或氢离子产生到具有特定剂量范围的离子束中的离子束源，以及被配置为从离子束去除不想要的物质的分析器磁体。 离子注入机包括具有后侧气体热耦合的静电卡盘，其被配置为保持单个工件用于通过离子束进行绝缘体上硅的注入，并且被配置为将工件冷却至约300℃的温度 至600℃

公开(公告)号：US20060284114A1

公开(公告)日：2006-12-21

申请号：US11300425

申请日：2005-12-15

申请人： Joseph Olson ,  Jonathan England ,  Morgan Evans ,  Douglas Fielder ,  Gregg Norris ,  Shengwu Chang ,  Damian Brennan ,  William Callahan

发明人： Joseph Olson ,  Jonathan England ,  Morgan Evans ,  Douglas Fielder ,  Gregg Norris ,  Shengwu Chang ,  Damian Brennan ,  William Callahan

IPC分类号： H01J37/317

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

摘要翻译： 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子束均匀性调谐的方法。 该方法可以包括在离子注入机系统中产生离子束。 该方法还可以包括调整离子注入系统中的一个或多个束线元件，以便当沿着光束路径扫描离子束时，减小离子束的束斑的变化。 该方法还可以包括调整用于沿着光束路径扫描离子束的速度分布，使得离子束沿着光束路径产生基本均匀的离子束分布。

公开(公告)号：US20060219954A1

公开(公告)日：2006-10-05

申请号：US11241894

申请日：2005-09-30

申请人： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

发明人： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

IPC分类号： H01J37/08 ,  G21K5/10

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/31761 ,  Y10S438/961

摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.

摘要翻译： 离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片 以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而 在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3） 操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。 操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。