公开(公告)号：US07776682B1

公开(公告)日：2010-08-17

申请号：US11110165

申请日：2005-04-20

申请人： Alexander Nickel ,  Suzette K. Pangrle ,  Steven C. Avanzino ,  Jeffrey Shields ,  Fei Wang ,  Minh Tran ,  Juri H. Krieger ,  Igor Sokolik

发明人： Alexander Nickel ,  Suzette K. Pangrle ,  Steven C. Avanzino ,  Jeffrey Shields ,  Fei Wang ,  Minh Tran ,  Juri H. Krieger ,  Igor Sokolik

IPC分类号： H01L21/8242

CPC分类号： H01L45/1233 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/141 ,  H01L45/142 ,  H01L45/146 ,  H01L45/149 ,  H01L45/1616

摘要： Disclosed are methods and systems for improving cell-to-cell repeatability of electrical performance in memory cells. The methods involve forming an electrically non-conducting material having ordered porosity over a passive layer. The ordered porosity can facilitate formation of conductive channels through which charge carriers can migrate across the otherwise non-conductive layer to facilitate changing a state of a memory cell. A barrier layer can optionally be formed over the non-conductive layer, and can have ordered porosity oriented in a manner substantially perpendicular to the conductive channels such that charge carries migrating across the non-conductive layer cannot permeate the barrier layer. The methods provide for the manufacture of microelectronic devices with cost-effective and electrically reliable memory cells.

摘要翻译： 公开了用于改善记忆单元中电性能的细胞间细胞重复性的方法和系统。 所述方法包括在无源层上形成具有有序孔隙率的非导电材料。 有序孔隙度可以促进导电通道的形成，电荷载体可以穿过导​​电通道迁移穿过另外的非导电层以便于改变存储器单元的状态。 可以可选地在非导电层上形成阻挡层，并且可以以基本上垂直于导电沟道的方式定向排序的孔隙，使得穿过非导电层迁移的电荷不能渗透到阻挡层。 该方法提供了具有成本效益和电可靠性的存储单元的微电子器件的制造。

公开(公告)号：US07220642B2

公开(公告)日：2007-05-22

申请号：US10987262

申请日：2004-11-12

申请人： Steven Avanzino ,  Igor Sokolik ,  Suzette Pangrle ,  Nicholas H. Tripsas ,  Jeffrey Shields

发明人： Steven Avanzino ,  Igor Sokolik ,  Suzette Pangrle ,  Nicholas H. Tripsas ,  Jeffrey Shields

IPC分类号： H01L21/336

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

摘要： A method of fabricating an electronic structure by providing a conductive layer, providing a dielectric layer over the conductive layer, providing first and second openings through the dielectric layer, providing first and second conductive bodies in the first and second openings respectively and in contact with the conductive layer, providing a memory structure over the first conductive body, providing a protective element over the memory structure, and undertaking processing on the second conductive body.

摘要翻译： 一种通过提供导电层制造电子结构的方法，在导电层上提供电介质层，提供通过介电层的第一和第二开口，分别在第一和第二开口中提供第一和第二导电体，并与 在第一导电体上提供存储结构，在存储器结构上提供保护元件，并对第二导电体进行处理。