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16 条记录 (耗时 0.017 秒)

    Gate-controlled rectifier and application to rectification circuits thereof
    13.
    发明授权
    Gate-controlled rectifier and application to rectification circuits thereof 失效
    门控整流器及其整流电路

    公开(公告)号：US07884663B2

    公开(公告)日：2011-02-08

    申请号：US12569298

    申请日：2009-09-29

    申请人： Chih-Liang Wang ,  Ching-Sheng Yu ,  Po-Tai Wong

    发明人： Chih-Liang Wang ,  Ching-Sheng Yu ,  Po-Tai Wong

    IPC分类号： H03K17/56

    CPC分类号： H02M7/217 ,  H02M3/33592 ,  H02M2001/0048 ,  Y02B70/1475 ,  Y02B70/1491

    摘要： Conventional diode rectifiers usually suffer from a higher conduction loss. The present invention discloses a gate-controlled rectifier, which comprises a line voltage polarity detection circuit, a constant voltage source, a driving circuit and a gate-controlled transistor. The line voltage polarity detection circuit detects the polarity of the line voltage and controls the driving circuit to turn on or turn off the gate-controlled transistor. The gate-controlled transistor may be a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a gate, a source and a drain or an Insulated Gate Bipolar Transistor (IGBT) with a gate, an emitter and a collector. The constant voltage source is provided or induced by external circuits and referred to the source of the MOSFET or the emitter of the IGBT. Thanks to a lower conduction loss, this gate-controlled rectifier can be applied to rectification circuits to increase the rectification efficiency.

    摘要翻译： 传统的二极管整流器通常具有较高的导通损耗。 本发明公开了一种门控整流器，其包括线路电压极性检测电路，恒压源，驱动电路和栅极控制晶体管。 线路电压极性检测电路检测线路电压的极性，并控制驱动电路导通或关闭栅极控制晶体管。 栅极控制晶体管可以是具有栅极，源极和漏极的金属氧化物半导体场效应晶体管（MOSFET）或具有栅极，发射极和集电极的绝缘栅双极晶体管（IGBT）。 恒压源由外部电路提供或感应，并称为MOSFET的源极或IGBT的发射极。 由于导通损耗较低，该门控整流器可以应用于整流电路，以提高整流效率。

    AC/DC MODULATION CONVERSION SYSTEM AND APPLICATION THEREOF
    14.
    发明申请
    AC/DC MODULATION CONVERSION SYSTEM AND APPLICATION THEREOF 审中-公开
    AC / DC调制转换系统及其应用

    公开(公告)号：US20100141170A1

    公开(公告)日：2010-06-10

    申请号：US12634072

    申请日：2009-12-09

    申请人： Ching-Sheng YU ,  Yi-Chang LEU ,  Hsin-Yi LEE

    发明人： Ching-Sheng YU ,  Yi-Chang LEU ,  Hsin-Yi LEE

    IPC分类号： H05B37/02 ,  H02M7/42

    CPC分类号： H02M7/1557

    摘要： This invention discloses an AC/DC modulation conversion system, which comprises a control signal transmitter, a control signal receiver and a control signal/modulation signal converter. The control signal transmitter transmits a control signal, the control signal receiver receives the control signal, the control signal/modulation signal converter converts the control signal into a pulse width modulation signal or a DC level modulation signal. Therefore, this AC/DC modulation conversion system can be applied to controllable DC load circuits such as a controllable DC heater, a controllable DC motor or a controllable DC lamp etc for respectively controlling the temperature, speed or brightness etc.

    摘要翻译： 本发明公开了一种AC / DC调制转换系统，其包括控制信号发射机，控制信号接收机和控制信号/调制信号转换器。 控制信号发送器发送控制信号，控制信号接收器接收控制信号，控制信号/调制信号转换器将控制信号转换成脉宽调制信号或直流电平调制信号。 因此，该AC / DC调制转换系统可以应用于可控直流加热器，可控DC电动机或可控DC灯等可控直流负载电路，以分别控制温度，速度或亮度等。

    UNIDIRECTIONAL MOSFET AND APPLICATIONS THEREOF
    15.
    发明申请
    UNIDIRECTIONAL MOSFET AND APPLICATIONS THEREOF 失效
    独立MOSFET及其应用

    公开(公告)号：US20100067275A1

    公开(公告)日：2010-03-18

    申请号：US12554545

    申请日：2009-09-04

    申请人： Chih-Liang WANG ,  Ching-Sheng Yu ,  Po-Tai Wong

    发明人： Chih-Liang WANG ,  Ching-Sheng Yu ,  Po-Tai Wong

    IPC分类号： H03K17/687 ,  H02M7/217

    CPC分类号： H03K17/302 ,  H02M3/33592 ,  Y02B70/1433 ,  Y02B70/1475

    摘要： Owing to the property of bidirectional conduction under the saturation mode, synchronous rectifiers in conventional power converters usually suffer from a reverse current under light loads or a shoot-through current under heavy loads. The reverse current may degrade the converter efficiency and the shoot-through current may damage synchronous rectifiers. The present invention discloses a unidirectional metal oxide semiconductor field effect transistor (UMOS), which comprises a metal oxide semiconductor field effect transistor (MOS), a current detection circuit and a fast turn-off circuit. The current detection circuit detects the direction of the current flowing through the MOS. When a forward current is detected, the fast turn-off circuit is disabled and the channel of the MOS can be formed. When a reverse current is detected, the fast turn-off circuit is enabled and the channel of the MOS cannot be formed. This UMOS can be applied, but not limited, to synchronous rectifiers to detect the occurrence of a reverse current or a shoot-through current and fast turn off the channel of the MOSFET.

    摘要翻译： 由于在饱和模式下双向传导的特性，常规功率转换器中的同步整流器通常在轻负载下的逆电流或重负载下的直通电流受损。 反向电流可能会降低转换器效率，直通电流可能会损坏同步整流器。 本发明公开了一种单向金属氧化物半导体场效应晶体管（UMOS），其包括金属氧化物半导体场效应晶体管（MOS），电流检测电路和快速关断电路。 电流检测电路检测流过MOS的电流的方向。 当检测到正向电流时，禁止快速关断电路并且可以形成MOS通道。 当检测到反向电流时，快速关断电路被使能，并且不能形成MOS通道。 该UMOS可以应用但不限于同步整流器来检测反向电流或直通电流的发生，并快速关闭MOSFET的通道。

    High transmittance touch panel
    16.
    发明申请
    High transmittance touch panel 审中-公开
    高透光率触摸屏

    公开(公告)号：US20070292659A1

    公开(公告)日：2007-12-20

    申请号：US11453015

    申请日：2006-06-15

    申请人： Chia-Yen Li ,  Pin-Sheng Ho ,  Sheng-Tsung Chen ,  Ching-Sheng Yu ,  Hsiao-Chun Chen ,  Chia-Chih Chang ,  Tsung-Chih Huang

    发明人： Chia-Yen Li ,  Pin-Sheng Ho ,  Sheng-Tsung Chen ,  Ching-Sheng Yu ,  Hsiao-Chun Chen ,  Chia-Chih Chang ,  Tsung-Chih Huang

    IPC分类号： B32B5/16 ,  B32B9/00 ,  B32B19/00

    CPC分类号： G06F3/041 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/25 ,  Y10T428/269

    摘要： The present invention discloses a high transmittance touch panel, which comprises a substrate and at least one multi-layer anti-reflection coating structure coated on the front side of the substrate. The multi-layer anti-reflection coating structure is a four-layer structure, and the refractive indexes of those layers are high, low, high, and low sequentially from the side neighboring the substrate. The outmost layer is a protective layer having a refractive index within from 1.3 to 1.5 and a thickness of at least 0.1 μm and a hardness reaching 9H of ASTM-D3363. Via the protective layer, not only the transmittance of the touch panel of the present invention can reach over 92% according to ASTM-D1003, but also the abrasion resistance of the touch panel surface can be enhanced.

    摘要翻译： 本发明公开了一种高透光率触摸面板，其包括基板和涂覆在基板正面上的至少一层多层防反射涂层结构。 多层抗反射涂层结构是四层结构，并且这些层的折射率从邻近基板的一侧依次高，低，高和低。 最外层是折射率为1.3〜1.5，厚度为0.1μm以上，硬度达到ASTM-D3363的9H的保护层。 通过保护层，不仅根据ASTM-D1003，本发明的触摸面板的透射率可以达到超过92％，而且可以提高触摸面板表面的耐磨性。