POLARIZED LIGHT DETECTING DEVICE AND FABRICATION METHODS OF THE SAME
    11.
    发明申请
    POLARIZED LIGHT DETECTING DEVICE AND FABRICATION METHODS OF THE SAME 有权
    偏振光检测器件及其制造方法

    公开(公告)号:US20110309240A1

    公开(公告)日:2011-12-22

    申请号:US13047392

    申请日:2011-03-14

    摘要: Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.

    摘要翻译: 这里描述的是可操作以检测偏振光的装置,包括:基板; 第一子像素 与所述第一子像素相邻的第二子像素; 所述第一子像素中的第一多个特征和所述第二子像素中的第二多个特征,其中所述第一多个特征基本上垂直于所述基底延伸并且在平行于所述基底的第一方向上基本上平行延伸,并且所述第二多个 特征基本上垂直于基底延伸并且在平行于基底的第二方向基本上平行延伸; 其中所述第一方向和所述第二方向不同; 第一多个特征和第二多个特征对偏振光的反应不同。

    OPTICAL WAVEGUIDES IN IMAGE SENSORS
    12.
    发明申请
    OPTICAL WAVEGUIDES IN IMAGE SENSORS 有权
    图像传感器中的光学波形

    公开(公告)号:US20100163714A1

    公开(公告)日:2010-07-01

    申请号:US12648942

    申请日:2009-12-29

    申请人: Munib WOBER

    发明人: Munib WOBER

    IPC分类号: G02B6/06

    摘要: An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.

    摘要翻译: 一个实施例涉及一种图像传感器,其包括:(a)包括芯和包层的光学管,以及(b)一对感光元件,包括中央感光元件和周边光敏元件,其中中央感光元件可操作地耦合到 芯和周边光敏元件可操作地耦合到包层,以及制造和使用它们的方法。 图像传感器还可以包括在光学管上的透镜结构或光耦合器或光耦合器,其中透镜结构或光耦合器或光耦合器可操作地耦合到光管。

    Determination of optimal diameters for nanowires
    14.
    发明授权
    Determination of optimal diameters for nanowires 有权
    确定纳米线的最佳直径

    公开(公告)号:US08810808B2

    公开(公告)日:2014-08-19

    申请号:US13971523

    申请日:2013-08-20

    申请人: Munib Wober

    发明人: Munib Wober

    IPC分类号: G01B11/14

    摘要: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.

    摘要翻译: 优化纳米线光电二极管光传感器直径的方法。 该方法包括比较具有预定直径的纳米线光电二极管像素与标准光谱响应曲线的响应,并确定光电二极管像素的光谱响应与标准光谱响应曲线之间的差异。 还包括具有优化的纳米线直径和场景重建方法的纳米线光电二极管光传感器。

    Active pixel sensor with nanowire structured photodetectors
    15.
    发明授权
    Active pixel sensor with nanowire structured photodetectors 失效
    有源像素传感器与纳米线结构光电探测器

    公开(公告)号:US08766272B2

    公开(公告)日:2014-07-01

    申请号:US13543556

    申请日:2012-07-06

    IPC分类号: H01L29/15

    摘要: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.”

    摘要翻译: “形成为组合CMOS制造工艺和纳米线制造工艺的有源像素阵列的成像器件。 阵列中的像素可以包括围绕纳米线的单个或多个摄像机。 摄影门控制纳米线中的电位分布,允许在纳米线中积累光生电荷并传输电荷用于信号读出。 每个像素可以包括读出电路,其可以包括复位晶体管,电荷转移开关晶体管,源极跟随放大器和像素选择晶体管。 纳米线通常构造为在体半导体衬底上的垂直杆,以接收入射到纳米线的尖端上的光能。 纳米线可以被配置为用作被配置为将光引导到衬底的光电检测器或波导。 可以使用成像装置检测不同波长的光。

    Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
    17.
    发明授权
    Nanowire structured photodiode with a surrounding epitaxially grown P or N layer 失效
    具有周围外延生长的P或N层的纳米线结构光电二极管

    公开(公告)号:US08519379B2

    公开(公告)日:2013-08-27

    申请号:US12633318

    申请日:2009-12-08

    IPC分类号: H01L29/06

    摘要: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.

    摘要翻译: 一个实施例涉及一种包括衬底,纳米线和围绕纳米线的掺杂外延层的器件,其中纳米线被配置为既是透射波长到选择波长的通道,又是有源元件,以检测直到 选择性波长通过纳米线传输。 另一个实施例涉及一种包括衬底,纳米线和围绕纳米线的一个或多个光栅的器件,其中纳米线被配置为既是透射波长到选择波长的通道,也包括有源元件,以检测直到 透射通过纳米线的选择性波长,并且其中所述一个或多个摄像机包括外延层。

    Vertically structured passive pixel arrays and methods for fabricating the same
    18.
    发明授权
    Vertically structured passive pixel arrays and methods for fabricating the same 失效
    垂直结构的无源像素阵列及其制造方法

    公开(公告)号:US08507840B2

    公开(公告)日:2013-08-13

    申请号:US12974499

    申请日:2010-12-21

    IPC分类号: H01L31/00 H01J40/14

    摘要: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.

    摘要翻译: 公开了一种图像传感器和图像传感器的使用方法,图像传感器的制造方法以及包括图像传感器的装置。 图像传感器具有像素,包括至少一个纳米柱,其具有围绕至少一个纳米柱的栅电极,其中所述至少一个纳米柱适于将入射到其上的光转换成电信号,并且栅电极可操作地夹紧或允许电流 通过至少一个纳米柱。 图像传感器可以具有以可单独寻址的方式布置的多个像素。 至少一个纳米柱具有包层。 包层的折射率小于纳米柱的折射率。

    OPTICAL WAVEGUIDES IN IMAGE SENSORS
    19.
    发明申请
    OPTICAL WAVEGUIDES IN IMAGE SENSORS 有权
    图像传感器中的光学波形

    公开(公告)号:US20130020620A1

    公开(公告)日:2013-01-24

    申请号:US13556041

    申请日:2012-07-23

    申请人: Munib WOBER

    发明人: Munib WOBER

    IPC分类号: H01L31/0232 H01L27/146

    摘要: An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.

    摘要翻译: 一个实施例涉及一种图像传感器,其包括:(a)包括芯和包层的光学管,以及(b)一对感光元件,包括中央感光元件和周边光敏元件,其中中央感光元件可操作地耦合到 芯和周边光敏元件可操作地耦合到包层,以及制造和使用它们的方法。 图像传感器还可以包括在光学管上的透镜结构或光耦合器或光耦合器,其中透镜结构或光耦合器或光耦合器可操作地耦合到光管。

    DETERMINATION OF OPTIMAL DIAMETERS FOR NANOWIRES
    20.
    发明申请
    DETERMINATION OF OPTIMAL DIAMETERS FOR NANOWIRES 失效
    确定纳米级的最佳直径

    公开(公告)号:US20130016258A1

    公开(公告)日:2013-01-17

    申请号:US13621607

    申请日:2012-09-17

    申请人: Munib WOBER

    发明人: Munib WOBER

    摘要: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.

    摘要翻译: 优化纳米线光电二极管光传感器直径的方法。 该方法包括比较具有预定直径的纳米线光电二极管像素与标准光谱响应曲线的响应,并确定光电二极管像素的光谱响应与标准光谱响应曲线之间的差异。 还包括具有优化的纳米线直径和场景重建方法的纳米线光电二极管光传感器。