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    Fan-out semiconductor package
    164.
    发明授权
    Fan-out semiconductor package 有权

    公开(公告)号：US12283577B2

    公开(公告)日：2025-04-22

    申请号：US17862482

    申请日：2022-07-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joonsung Kim ,  Seokwon Lee

    IPC: H01L25/18 ,  H01L23/00 ,  H01L23/13 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/16 ,  H01L49/02

    Abstract: A fan-out semiconductor package includes: a package body including a fan-in area corresponding to a through-hole located therein, a fan-out area surrounding the fan-in area, and a body interconnect structure arranged in the package body corresponding to the fan-out area; a fan-in chip structure located in the through-hole, the fan-in chip structure comprising a first chip, a capacitor chip arranged to be apart from the first chip, and a second chip disposed on both the first chip and the capacitor chip; a redistribution structure arranged on a bottom surface of the package body and a bottom surface of the fan-in chip structure and including a redistribution element extending to the fan-out area; and an interconnect via arranged on a top surface of the package body and electrically connected to the redistribution element in the fan-out area.

    Method of repairing through-electrodes, repair device performing the same and semiconductor device including the same
    165.
    发明授权
    Method of repairing through-electrodes, repair device performing the same and semiconductor device including the same 有权

    公开(公告)号：US12283529B2

    公开(公告)日：2025-04-22

    申请号：US17660920

    申请日：2022-04-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sungho Kang ,  Youngkwang Lee

    IPC: H01L21/66 ,  H01L23/48 ,  H03K17/00

    Abstract: In a method of repairing through-electrodes, a plurality of through-electrodes are grouped into a plurality of through-electrode groups. A plurality of redundant through-electrodes are grouped into a plurality of redundant through-electrode groups. Repair paths for the plurality of through-electrodes are searched. When searching the repair paths, in response to a Y-th through-electrode included in an X-th through-electrode group being a defective through-electrode or in response to receiving a first signal from an (X−1)-th through-electrode group, it is determined whether a y-th redundant through-electrode included in an x-th redundant through-electrode group is available for performing signal transmission thereto. In response to the y-th redundant through-electrode being available for performing signal transmission thereto, a second signal input to the Y-th through-electrode is transmitted to the y-th redundant through-electrode. In response to the y-th redundant through-electrode being unavailable for performing signal transmission thereto, the second signal input to the Y-th through-electrode is transmitted to an (X+1)-th through-electrode group.

    Storage device for managing data based on time information and operation method thereof
    167.
    发明授权
    Storage device for managing data based on time information and operation method thereof 有权

    公开(公告)号：US12282424B2

    公开(公告)日：2025-04-22

    申请号：US18238858

    申请日：2023-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung-Ho Lee

    IPC: G06F12/00 ,  G06F12/02

    Abstract: Disclosed is an operation method of a storage device which includes receiving a record including owner data and time information, mapping the time information included in the received record to a physical address of a non-volatile memory, storing part or all of the record including the owner data to the mapped physical address of the non-volatile memory, receiving an access request including a time period, generating output data by performing data processing with respect to owner data corresponding to the time period, and transmitting the output data to the outside.

    Method and apparatus for managing memory of storage system
    168.
    发明授权
    Method and apparatus for managing memory of storage system 有权

    公开(公告)号：US12282421B2

    公开(公告)日：2025-04-22

    申请号：US18384646

    申请日：2023-10-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dohyeon Kim ,  Hong Rak Son ,  Jae Hun Jang ,  Mankeun Seo ,  Yong Ho Song

    IPC: G06F12/00 ,  G06F12/02

    Abstract: The present disclosure provides method and apparatuses for managing memory of storage system. In some embodiments, a controller of a storage system includes a memory storing a program, and a processor configured to execute the program to determine whether a type of data stored in the memory is at least one of a first data type and a second data type, store, in the memory, a header of the data stored in the memory, based on a first determination that the data stored in the memory is of the first data type, compress the data stored in the memory, based on a second determination that data stored in the memory is of the second data type, and power off the memory based on at least one of the header of the data and the compressed data having been stored in the memory.

    Display apparatus and light source device thereof
    169.
    发明授权
    Display apparatus and light source device thereof 有权

    公开(公告)号：US12282226B2

    公开(公告)日：2025-04-22

    申请号：US18662247

    申请日：2024-05-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungyeol Kim ,  Kyungsoo Park ,  Chunsoon Park ,  Kyehoon Lee

    IPC: G02F1/13357 ,  F21K9/64 ,  F21Y105/16 ,  F21Y115/10

    Abstract: A display apparatus is provided that includes: a printed circuit board (PCB); a light emitting diode (LED) chip mounted on the PCB and configured to emit light; an optical dome disposed over and enclosing the LED chip; a distributed Bragg reflector (DBR) layer arranged on an upper surface of the LED chip; a liquid crystal panel configured to block or pass light output from the LED chip; an optical film arranged between the LED chip and the liquid crystal panel, wherein the optical film comprises a quantum dot sheet formed to enhance color reproducibility by making a change in wavelength of light.

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