公开(公告)号：US08065622B2

公开(公告)日：2011-11-22

申请号：US12202421

申请日：2008-09-01

Applicant: Xiao-Guang Li ,  Kuan-Hong Hsieh ,  Han-Che Wang ,  Li Wang ,  Shin-Hong Chung ,  Hua-Dong Cheng

Inventor： Xiao-Guang Li ,  Kuan-Hong Hsieh ,  Han-Che Wang ,  Li Wang ,  Shin-Hong Chung ,  Hua-Dong Cheng

IPC: G06F3/048

CPC classification number: G09G3/20 ,  G09G5/00 ,  G09G2310/0221

Abstract: A displaying device includes an input unit, a region defining unit, a content allocating unit, an obtaining unit, a display controlling unit and a display unit. The region defining unit defines regions by incorporating one or more unit regions in each of the regions according to users' selections and generates region defining information. The content allocating unit allocates contents for the regions according to the users' selections and generates content allocating information. The obtaining unit obtains the region defining information, the content allocating information, and contents according to the content allocating information, and then transmits the information and contents to the display controlling unit. The display controlling unit splits a display area of the display unit into the regions defined by the region defining unit and displays the contents in the regions correspondingly according to the content allocating information. Related methods are also provided.

Abstract translation: 显示装置包括输入单元，区域定义单元，内容分配单元，获取单元，显示控制单元和显示单元。 区域定义单元通过根据用户的选择在每个区域中并入一个或多个单元区域来定义区域，并且生成区域定义信息。 内容分配单元根据用户的选择分配区域的内容，生成内容分配信息。 获取单元根据内容分配信息获得区域定义信息，内容分配信息和内容，然后将该信息和内容发送到显示控制单元。 显示控制单元将显示单元的显示区域划分为由区域定义单元定义的区域，并根据内容分配信息相应地显示区域中的内容。 还提供了相关方法。

公开(公告)号：US20110142725A1

公开(公告)日：2011-06-16

申请号：US12635523

申请日：2009-12-10

Applicant: Xuanbin Liu ,  Li Wang

Inventor： Xuanbin Liu ,  Li Wang

IPC: A61L9/00 ,  A61L9/20 ,  B01J37/34 ,  F24F3/16 ,  B23P17/00

CPC classification number: A61L9/205 ,  A61L2209/14

Abstract: A photocatalytic air purification apparatus and method of fabricating the same. The apparatus may be configured to include a light source surrounded by one or more porous plate substrates. An inner and outer surface of each plate substrate may be coated with a photocatalyst material. The light source may be placed in a direction parallel to the direction of an air flow and in optical proximity to the plate substrates in order to activate the photocatalyst coating. The photocatalyst coating associated with the plate substrates may be activated by absorbing light with a wavelength shorter than a cut-off activation wavelength from the light source in order to capture and decompose organic components and airborne pollutants in the air by the activated photocatalyst.

Abstract translation: 一种光催化空气净化装置及其制造方法。 该装置可以被配置为包括由一个或多个多孔板基板包围的光源。 每个板基板的内表面和外表面可以涂覆有光催化剂材料。 光源可以沿平行于空气流的方向的方向放置，并且光​​学接近板基板，以激活光催化剂涂层。 可以通过从光源吸收波长短于截止激活波长的光来激活与板基板相关联的光催化剂涂层，以通过活化的光催化剂捕获和分解空气中的有机组分和空气传播的污染物。

公开(公告)号：US20110140080A1

公开(公告)日：2011-06-16

申请号：US13059140

申请日：2008-08-19

Applicant: Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Guping Wang ,  Shaohua Zhang

Inventor： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Guping Wang ,  Shaohua Zhang

IPC: H01L33/06 ,  H01L33/58 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/382 ,  H01L33/44

Abstract: One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.

Abstract translation: 本发明的一个实施例提供一种制造发光二极管的方法。 该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。 该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）多层结构。 此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。 此外，该方法包括去除生长衬底。 此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

公开(公告)号：US20110133159A1

公开(公告)日：2011-06-09

申请号：US13059400

申请日：2008-08-19

Applicant: Fengyi Jiang ,  Yingwen Tang ,  Chunlan Mo ,  Li Wang

Inventor： Fengyi Jiang ,  Yingwen Tang ,  Chunlan Mo ,  Li Wang

IPC: H01L33/06 ,  H01L33/44

CPC classification number: H01L33/145 ,  H01L33/0079 ,  H01L33/44

Abstract: A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.

Abstract translation: 半导体发光器件包括衬底，第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱（MQW）有源层 。 该器件还包括耦合到第一掺杂半导体层的第一电极，其中部分第一掺杂半导体层被钝化，并且其中第一掺杂半导体层的钝化部分使第一电极与第一掺杂半导体层的边缘基本绝缘 层，从而减少表面复合。 该器件还包括耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层，MQW有源层和第二掺杂半导体层的水平表面的一部分的侧壁的钝化层， 不被第二电极覆盖。

公开(公告)号：US20110133158A1

公开(公告)日：2011-06-09

申请号：US13059031

申请日：2008-08-19

Applicant: Fengyi Jiang ,  Li Wang ,  Chunlan Mo ,  Wenqing Fang

Inventor： Fengyi Jiang ,  Li Wang ,  Chunlan Mo ,  Wenqing Fang

IPC: H01L33/06 ,  H01L21/20

CPC classification number: H01L21/0262 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

Abstract: A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.

Abstract translation: 通过使用氮化铟镓（InGaN）半导体材料制造量子阱的方法包括在反应器室中的第一预定温度下在层状III-V族氮化物结构上制造势阱，通过将反应器中的In前体气体和 一种Ga前体气体。 该方法还包括在制造势阱之后，终止Ga前体气体，保持In前体气体的流动，并将反应器室中的温度升高到第二预定温度，同时调节In前体气体流速 从第一流量到第二流量。 此外，该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。 该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。

公开(公告)号：US07919784B2

公开(公告)日：2011-04-05

申请号：US12063978

申请日：2006-09-29

Applicant: Fengyi Jiang ,  Li Wang ,  Wenqing Fang

Inventor： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

Abstract: One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.

Abstract translation: 本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部包层的导电路径的下欧姆接触层。 下欧姆接触层具有与上欧姆接触层的形状基本上不同的形状，从而当施加电压时，载流子转移离开有源层的基本上在上欧姆接触层下方的部分 到上，下欧姆接触层。

公开(公告)号：US20110042685A1

公开(公告)日：2011-02-24

申请号：US12543473

申请日：2009-08-18

Applicant: Li Wang ,  Sima Dimitrijev ,  Alan Iacopi ,  Jisheng Han ,  Leonie Hold ,  Philip Tanner ,  Fred Kong ,  Herbert Harrison

Inventor： Li Wang ,  Sima Dimitrijev ,  Alan Iacopi ,  Jisheng Han ,  Leonie Hold ,  Philip Tanner ,  Fred Kong ,  Herbert Harrison

IPC: H01L29/24 ,  C30B23/00

CPC classification number: C30B25/165 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262

Abstract: Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including epitaxial layers, by supplying sources of silicon and carbon with sequential emphasis. In at least some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer on a substrate in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source, and purging other gaseous materials subsequent to converting the layer. The presence of the silicon source can be independent of the presence of the carbon source. In some embodiments, dopants, such as n-type dopants, can be introduced during the formation of the epitaxial layer of silicon carbide.

Abstract translation: 本发明的实施例一般涉及半导体和半导体制造技术，更具体地涉及通过以顺序强调提供硅和碳的源来形成包括外延层的碳化硅结构的器件，集成电路，衬底和方法。 在至少一些实施例中，形成碳化硅外延层的方法可以包括在硅源的存在下在衬底上沉积层，以及在沉积层之后吹扫气态材料。 此外，该方法可以包括在碳源的存在下将层转化为碳化硅的子层，以及在转换层之后吹扫其它气态材料。 硅源的存在可以独立于碳源的存在。 在一些实施例中，可以在形成碳化硅外延层期间引入掺杂剂，例如n型掺杂剂。

公开(公告)号：US20110006319A1

公开(公告)日：2011-01-13

申请号：US12159850

申请日：2007-08-31

Applicant: Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

Inventor： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

IPC: H01L33/30 ,  H01L33/32

CPC classification number: H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

Abstract translation: 本发明的一个实施例提供了一种包含n型GaN基半导体层（n型层）的基于氮化镓（GaN）的半导体发光器件（LED）。 活性层 和p型GaN类半导体层（p型层）。 在生长活性层和p型层之前，通过使用氨气（NH 3）作为氮源，外延生长n型层。 V组和III组元件之间的流量比从初始值逐渐减小到最终值。 GaN基LED呈现等于或大于60伏的反向击穿电压。

公开(公告)号：US20100266168A1

公开(公告)日：2010-10-21

申请号：US12666186

申请日：2008-06-19

Applicant: Li Wang ,  Abhir Bhalerao ,  Roland Wilson

Inventor： Li Wang ,  Abhir Bhalerao ,  Roland Wilson

IPC: G06K9/00

CPC classification number: G06K9/001

Abstract: Exemplary embodiments of method and apparatus for processing the images of fingerprints can be provided. For example, aligned images can be subjected to a tessellation process, whereas each image can be partitioned into a number of regions. Within each region at least one parameter associated with the ridges can be measured and stored. Such exemplary parameter can include, e.g., the prevailing ridge orientation, the average ridge separation and the phase of the ridges. The data can be projected and stored in a multidimensional coordinate system, whereas the representations of any two data can be separated by an amount corresponding to the dissimilarity of these data.

Abstract translation: 可以提供用于处理指纹图像的方法和装置的示例性实施例。 例如，对齐的图像可以经历细分过程，而每个图像可以被分割成多个区域。 在每个区域内，可以测量和存储与脊相关联的至少一个参数。 这种示例性参数可以包括例如主要的脊取向，脊的平均脊分离和相位。 数据可以被投影并存储在多维坐标系中，而任何两个数据的表示可以被分开对应于这些数据的不相似性的量。

公开(公告)号：US20100256204A1

公开(公告)日：2010-10-07

申请号：US12523875

申请日：2008-01-18

Applicant: Sheila M. Tinetti ,  Paul Foley ,  Li Wang ,  Michael V. Enzien ,  Sanjay B. Bishnoi

Inventor： Sheila M. Tinetti ,  Paul Foley ,  Li Wang ,  Michael V. Enzien ,  Sanjay B. Bishnoi

IPC: A01N43/78 ,  A01P3/00 ,  B32B29/00

CPC classification number: D21H21/36 ,  A01N25/34 ,  A01N47/18 ,  B32B13/08 ,  B32B29/06 ,  D21H27/18 ,  E04C2/043 ,  Y10T428/31982 ,  Y10T428/31996 ,  A01N25/08 ,  A01N37/34 ,  A01N41/10 ,  A01N43/40 ,  A01N43/80 ,  A01N47/12 ,  A01N47/48 ,  A01N2300/00

Abstract: Wallboard and facing paper that provides increased mold resistance at lower biocide loadings. The biocide is: (a) an n-alkyl isothiazolinone such as octylisothiazolinone (OIT), a monohalo and dihalo substituted n-alkylisothiazolinone such as chloromethylisothiazolinone (CMIT) or dichlorooctylisothiazolinone (DCOIT), 3-iodo-2-propynyl-butylcarbamate (IPBC), chlorothalonil, methylene-bis-thiocyanate, or mixtures of two or more thereof; or (b) carbendazim and a second biocide selected from 3-iodo-2-propynyl-butylcarbamate (IPBC), diiodomethyltolylsulfone (DIMTS), sodium pyrithione, octylisothiazolinone (OIT), dichlorooctylisothiazolinone (DCOIT), and chlorothalonil.

Abstract translation: 墙板和面向纸，在较低的杀菌剂负载下提供增加的抗模压性。 杀生物剂是：（a）正辛基异噻唑啉酮如辛基异噻唑啉酮（OIT），单卤代和二卤代取代的正烷基异噻唑啉酮如氯甲基异噻唑啉酮（CMIT）或二氯辛基异噻唑啉酮（DCOIT），3-碘-2-丙炔基 - 丁基氨基甲酸酯 ），百菌清，亚甲基双硫氰酸盐，或其两种或多种的混合物; 或（b）多菌灵和选自3-碘-2-丙炔基 - 丁基氨基甲酸酯（IPBC），二碘甲基甲苯砜（DIMTS），吡啶硫酮钠，辛基异噻唑啉酮（OIT），二氯辛基异噻唑啉酮（DCOIT）和百菌清的第二种杀生物剂。