公开(公告)号：US06699399B1

公开(公告)日：2004-03-02

申请号：US09657793

申请日：2000-09-08

申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

IPC分类号： C23F400

CPC分类号： H01L21/02071 ,  Y10S438/905

摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残留物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

公开(公告)号：US06679981B1

公开(公告)日：2004-01-20

申请号：US09569736

申请日：2000-05-11

申请人： Shaoher X. Pan ,  Hiroji Hanawa ,  John C. Forster ,  Fusen Chen

发明人： Shaoher X. Pan ,  Hiroji Hanawa ,  John C. Forster ,  Fusen Chen

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  H01J37/3408

摘要： A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through the processing space. A tube has its two ends connected to the vacuum chamber on confronting sides of the processing space. An RF coil powered by an RF power supply is positioned adjacent to the tube outside of the chamber and aligned to produce an RF magnetic field around the toroidal circumference of the tube such that an electric field is induced along the tube axis. Thereby, a plasma is generated in the tube in a loop circling through the processing space.

摘要翻译： 一种等离子体反应室，特别是直流磁控溅射反应器，其中等离子体的等离子体密度和离子化分数由通过处理空间的等离子体感应回路增加。 管子的两端连接到处理空间相对侧的真空室。 由RF电源供电的RF线圈定位成与腔室外部的管相邻，并对齐以在管的环形圆周周围产生RF磁场，使得沿着管轴引起电场。 由此，在管中产生等离子体，环路通过处理空间。