Abstract:
Measures are described by which the back volume of a microphone component can be realized regardless of its packaging. Within the framework of a microphone module, a circuit board is used for the 2nd-level mounting of at least one microphone component part, in whose surface at least one connection opening is formed, which terminates in a cavity in the layer structure of the circuit board. In addition, the circuit board surface having the connection opening is configured for a sealing mounting of the microphone component part above the connection opening, so that the microphone component is acoustically connected to the cavity in the circuit board via the connection opening in the circuit board surface, and this cavity functions as backside volume for the microphone component part.
Abstract:
For simplifying the manufacture of a MEMS structural component including a deflectable diaphragm which spans an opening in the rear side of the structural component, and including a fixed counter-element, which is provided with passage openings, the counter-element from the base substrate of the MEMS structural component is patterned and the deflectable diaphragm is implemented in a layered structure on the base substrate. These measures are intended to improve the diaphragm properties and reduce the overall height of the MEMS structural component.
Abstract:
A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si1-x-yCxNy)-based layer.
Abstract:
Measures are provided for increasing the resistance to compression of a component having a micromechanical microphone pattern. In particular, the robustness of the microphone pattern to highly dynamic pressure fluctuations is to be increased, without the microphone sensitivity, i.e. the microphone performance, being impaired. The microphone pattern of such a component is implemented in a layer construction on a semiconductor substrate and includes at least one acoustically active diaphragm, which spans a sound hole on the substrate backside, and a stationary acoustically penetrable counterelement having through hole openings, which is situated above/below the diaphragm in the layer construction. At least one outflow channel is developed which makes possible a rapid pressure equalization between the two sides of the diaphragm. In addition, at least one controllable closing element is provided, with which the at least one outflow channel is optionally able to be opened or closed.
Abstract:
To implement cavities having different internal pressures in joining two semiconductor elements, at least one of the two element surfaces to be joined is structured, so that at least one circumferential bonding frame area is recessed or elevated in comparison with at least one other circumferential bonding frame area. At least one connecting layer should then be applied to this structured element surface and at least two circumferential bonding frames should be structured out of this connecting layer on different surface levels of the element surface. The topography created in the element surface permits sequential bonding in which multiple cavities between the two elements may be successively hermetically sealed, so that a defined internal pressure prevails in each of the cavities.
Abstract:
A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.
Abstract:
A micromechanical sensor system combination, and a corresponding manufacturing method, includes an interposer chip including a first front side and a first back side which includes first electrical contacts on the first front side and second electrical contacts on the first back side, the interposer chip having first electrical vias which electrically connect the first electrical contacts to the second electrical contacts; as well as a micromechanical sensor chip system including a second front side a second back side including at least one first sensor device and a second sensor device which are laterally adjacent, the first front side being attached on the second front side so that the first sensor device and the second sensor device are electrically and mechanically connected to the first electrical contacts.
Abstract:
A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved.
Abstract:
A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.
Abstract:
An image pixel apparatus for detecting electromagnetic radiation includes an absorption structure device configured to absorb the electromagnetic radiation and to take it up as a quantity of heat. At least one plasmonic resonance structure device of the apparatus is configured to forward the electromagnetic radiation to the absorption structure device. A detection device that has at least one detection element is configured to detect the electromagnetic radiation by way of changes in an electrical property of the at least one detection element that are caused by the quantity of heat taken up.