公开(公告)号：US5677865A

公开(公告)日：1997-10-14

申请号：US520257

申请日：1995-09-11

Applicant: Mirmajid Seyyedy

Inventor： Mirmajid Seyyedy

IPC: G11C11/22

CPC classification number: G11C11/22

Abstract: A random access memory circuit is described which uses single ferroelectric memory cells to store data. The ferroelectric memory cells can be selectively read using a reference voltage which is compared to a voltage representative of data stored on the memory cell using a multiplexed sense amplifier. The reference voltage is generated using a non-remnant capacitor circuit coupled to a bit line. In using a non-remnant capacitor circuit, a single-ended reference voltage can be generated on the bit line. The capacitance of the bit line is substantially greater than the capacitance of the non-remnant capacitor, therefore, the resultant reference voltage on the bit line remains relatively constant with fluctuations in supply voltage. A ferroelectric memory cell can then be read by comparing the voltage on its corresponding bit line to the reference voltage using the sense amplifier.

Abstract translation: 描述了使用单个铁电存储器单元来存储数据的随机存取存储器电路。 可以使用参考电压来选择性地读取铁电存储器单元，该参考电压使用多路复用读出放大器与代表存储在存储单元上的数据的电压进行比较。 使用耦合到位线的非残余电容电路产生参考电压。 在使用非残留电容电路时，可以在位线上产生单端参考电压。 位线的电容明显大于非残余电容的电容，因此，由于电源电压的波动，位线上的结果参考电压保持相对恒定。 然后可以通过使用读出放大器将其对应的位线上的电压与参考电压进行比较来读取铁电存储器单元。