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    Transmission electron microscope grid and method for making same
    1.
    发明授权
    Transmission electron microscope grid and method for making same 有权
    透射电子显微镜网格及其制作方法

    公开(公告)号：US08623227B2

    公开(公告)日：2014-01-07

    申请号：US13052064

    申请日：2011-03-19

    Applicant: Xiao-Yang Lin ,  Chen Feng ,  Li-Na Zhang ,  Kai-Li Jiang

    Inventor： Xiao-Yang Lin ,  Chen Feng ,  Li-Na Zhang ,  Kai-Li Jiang

    IPC: C03C15/00 ,  C03C25/68

    CPC classification number: H01J9/14 ,  H01J1/48 ,  H01J37/20 ,  H01J2203/0232

    Abstract: The present disclosure relates to a method for making a transmission electron microscope grid. The method includes: (a) providing a substrate with a graphene layer on a surface of the substrate; (b) applying a carbon nanotube film structure to cover the graphene layer; (c) removing the substrate, to obtain a graphene layer-carbon nanotube film composite structure; and (d) placing the graphene layer-carbon nanotube film composite structure on a grid.

    Abstract translation: 本公开涉及一种制造透射电子显微镜栅格的方法。 该方法包括：（a）在衬底的表面上提供具有石墨烯层的衬底; （b）施加覆盖所述石墨烯层的碳纳米管膜结构; （c）除去基板，得到石墨烯层 - 碳纳米管膜复合结构体; 和（d）将石墨烯层 - 碳纳米管膜复合结构放置在栅格上。

    Electrically isolated interconnects and conductive layers in semiconductor device manufacturing
    5.
    发明授权
    Electrically isolated interconnects and conductive layers in semiconductor device manufacturing 失效
    半导体器件制造中的电隔离互连和导电层

    公开(公告)号：US6010917A

    公开(公告)日：2000-01-04

    申请号：US725646

    申请日：1996-10-15

    Applicant: James J. Alwan ,  Kevin Tjaden ,  David A. Cathey

    Inventor： James J. Alwan ,  Kevin Tjaden ,  David A. Cathey

    IPC: H01L21/00

    CPC classification number: H01J31/127 ,  H01J29/467 ,  H01J3/022 ,  H01J9/148 ,  H01J2203/0228 ,  H01J2203/0232 ,  H01J2329/4626 ,  H01J2329/463

    Abstract: A method for fabricating microelectronic deices in which an interconnect layer is electrically isolated from large protuberances that project from a lower conductive layer to a desired endpoint of a chemical-mechanical planarization process. The lower conductive layer is covered with an insulating material to form an insulator layer that generally follows the contour of the lower conductive layer and any large protuberances. A highly conductive interconnect material is then deposited over the insulator layer to form an interconnect layer that generally follows the contour of the insulator layer. The interconnect layer may be deposited directly on the insulator layer, or it may be deposited on an intermediate layer between the interconnect layer and the insulator layer. After the upper conductive layer is deposited, the insulator layer and the upper conductive layer are planarized with a chemical-mechanical planarization process to a desired endpoint.

    Abstract translation: 一种用于制造微电子器件的方法，其中互连层与从下导电层突出到化学机械平面化工艺的期望端点的大突起电隔离。 下导电层被绝缘材料覆盖以形成通常遵循下导电层和任何大突起的轮廓的绝缘体层。 然后将高度导电的互连材料沉积在绝缘体层上，以形成大致遵循绝缘体层的轮廓的互连层。 互连层可以直接沉积在绝缘体层上，或者它可以沉积在互连层和绝缘体层之间的中间层上。 在沉积上导电层之后，通过化学机械平面化工艺将绝缘体层和上导电层平坦化成期望的端点。

    APPLICATIONS OF GRAPHENE GRIDS IN VACUUM ELECTRONICS
    7.
    发明申请
    APPLICATIONS OF GRAPHENE GRIDS IN VACUUM ELECTRONICS 有权
    石墨网在真空电子学中的应用

    公开(公告)号：US20150243468A1

    公开(公告)日：2015-08-27

    申请号：US14706485

    申请日：2015-05-07

    Applicant: ELWHA LLC

    Inventor： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Max N. Mankin ,  Tony S. Pan ,  Lowell L. Wood, JR.

    IPC: H01J19/38 ,  H01J1/48

    CPC classification number: H01J1/48 ,  H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

    Abstract: Graphene grids are configured for applications in vacuum electronic devices. A multilayer graphene grid is configured as a filter for electrons in a specific energy range, in a field emission device or other vacuum electronic device. A graphene grid can be deformable responsive to an input to vary electric fields proximate to the grid. A mesh can be configured to support a graphene grid.

    Abstract translation: 石墨烯网格被配置用于真空电子设备中的应用。 多层石墨烯栅格被配置为在特定能量范围内的电子的过滤器，在场发射器件或其它真空电子器件中。 石墨烯网格可以响应于输入而变形，以改变靠近网格的电场。 网格可以被配置为支持石墨烯网格。

    ELECTRONIC DEVICE MULTI-LAYER GRAPHENE GRID
    8.
    发明申请
    ELECTRONIC DEVICE MULTI-LAYER GRAPHENE GRID 有权
    电子设备多层石墨网

    公开(公告)号：US20150213992A1

    公开(公告)日：2015-07-30

    申请号：US14613459

    申请日：2015-02-04

    Applicant: ELWHA LLC

    Inventor： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Max N. Mankin ,  Tony S. Pan ,  Lowell L. Wood, JR.

    IPC: H01J19/38 ,  H01J19/24

    CPC classification number: H01J1/48 ,  H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

    Abstract: A vacuum electronic device includes a multi-layer graphene grid that includes at least two layers of graphene, where the transmission of electrons through the multi-layer graphene grid can be tuned by varying the parameters of the vacuum electronic device such as the number of graphene layers, relative positions of the electrodes, voltage biases applied to the electrodes, and other device parameters.

    Abstract translation: 真空电子器件包括多层石墨烯网格，其包括至少两层石墨烯，其中可以通过改变真空电子器件的参数（例如石墨烯的数量）来调节电子穿过多层石墨烯网格的透射 电极的相对位置，施加到电极的电压偏压和其它器件参数。

    Field emission cathode and field emission display employing with same
    9.
    发明授权
    Field emission cathode and field emission display employing with same 有权
    场致发射阴极和场致发射显示器采用相同的

    公开(公告)号：US08089206B2

    公开(公告)日：2012-01-03

    申请号：US12384232

    申请日：2009-04-02

    Applicant: Yang Wei ,  Peng Liu ,  Liang Liu ,  Shou-Shan Fan

    Inventor： Yang Wei ,  Peng Liu ,  Liang Liu ,  Shou-Shan Fan

    IPC: H01J17/49

    CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2203/0232 ,  H01J2203/0236 ,  H01J2329/0455 ,  H01J2329/463 ,  H01J2329/4634

    Abstract: A field emission display includes a field emission cathode and an anode electrode plate arranged above the field emission cathode. The filed emission cathode includes a substrate, and a plurality of electron-emitting areas spaced apart from each other and arranged on the substrate. Each of the electron-emitting areas includes a cathode, a gate electrode, and a number of first and second conductive lines. The cathode includes a first conductive substrate and a first carbon nanotube assembly having a plurality of carbon nanotubes each having a cathode emitting end having a needle-shaped tip. The gate electrode is faced to the cathode emitting end. The taper-shaped tips of the cathode emitting ends and the gate have a small size and higher aspect ratio, allowing them to bear a larger emission current at a lower voltage.

    Abstract translation: 场发射显示器包括场发射阴极和布置在场发射阴极上方的阳极电极板。 该场致发射阴极包括一个衬底和多个彼此间隔开并布置在衬底上的电子发射区。 每个电子发射区域包括阴极，栅电极和多个第一和第二导电线。 阴极包括第一导电基板和具有多个碳纳米管的第一碳纳米管组件，每个碳纳米管的阴极发射端均具有针状尖端。 栅电极面向阴极发射端。 阴极发射端和栅极的锥形尖端具有小尺寸和更高的纵横比，允许它们在较低电压下承受较大的发射电流。

    TRIODES USING NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME
    10.
    发明申请
    TRIODES USING NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 失效
    使用南方文章的三方及其制作方法

    公开(公告)号：US20090115305A1

    公开(公告)日：2009-05-07

    申请号：US12124475

    申请日：2008-05-21

    Applicant: Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

    Inventor： Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

    IPC: H01J21/10 ,  H01J9/385

    CPC classification number: H01J21/10 ,  H01J3/021 ,  H01J19/38 ,  H01J2203/0232 ,  Y10S977/742

    Abstract: Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.

    Abstract translation: 提供具有碳纳米管膜，层，带和织物的真空微电子器件。 本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成 设备。 在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中，使用用于加强纳米管织物层的方法。 公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。 在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

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