公开(公告)号：US20170317189A1

公开(公告)日：2017-11-02

申请号：US15303047

申请日：2016-06-12

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wanghua TU ,  Wanting YIN

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L29/66757 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78675

Abstract: A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-shielding and insulation. With doping through two through holes at two sides, the manufacturing process is simplified, the exposure process is simplified, the production time is shortened, the usage of masks is decreased, and the production cost is lowered.