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公开(公告)号：US20160155935A1
公开(公告)日：2016-06-02
申请号：US14557546
申请日：2014-12-02
Applicant: Texas Instruments Incorporated
Inventor： Mona M. EISSA , Yousong ZHANG , Mark JENSON
CPC classification number: C23F1/28 , C09K13/06 , C23F1/02 , G01R33/04 , G03F7/0005 , H01L21/02107
Abstract: An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.
Abstract translation: 用于以大致相等的蚀刻速率同时蚀刻NiFe和AlN的蚀刻剂，其包括磷酸，乙酸，硝酸和去离子水。 NiFe和AlN的交替层可用于在集成电路中形成磁通门磁强计的磁芯。 湿蚀刻提供良好的尺寸控制和良好的磁芯轮廓的交替层的良好蚀刻速率。 NiFe和AlN的交替层可以用应力释放层包封。 可以使用抗蚀剂图案来限定磁芯几何形状。 可以控制湿蚀刻的过蚀刻时间，使得磁芯图案延伸至超过磁芯柱蚀刻的底部至少1.5μm。 用于形成抗蚀剂图案的光掩模也可用于形成应力消除蚀刻图案。
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公开(公告)号：US20190211458A1
公开(公告)日：2019-07-11
申请号：US16354487
申请日：2019-03-15
Applicant: Texas Instruments Incorporated
Inventor： Mona M. EISSA , Yousong ZHANG , Mark JENSON
CPC classification number: C23F1/28 , C09K13/06 , C23F1/02 , G01R33/04 , G03F7/0005 , H01L21/02107
Abstract: An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.
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公开(公告)号：US20180087161A1
公开(公告)日：2018-03-29
申请号：US15809143
申请日：2017-11-10
Applicant: Texas Instruments Incorporated
Inventor： Mona M. EISSA , Yousong ZHANG , Mark JENSON
CPC classification number: C23F1/28 , C09K13/06 , C23F1/02 , G01R33/04 , G03F7/0005 , H01L21/02107
Abstract: An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.
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