摘要:
An acoustic wave device includes: a chip; an acoustic wave element formed on a principal surface of the chip; a first pad formed on the principal surface of the chip and electrically connected to the acoustic wave element; a substrate having a principal surface facing the principal surface of the chip; a second pad formed on the principal surface of the substrate; a first bump formed between the first pad and the second pad and electrically connecting the first pad and the second pad; and a second bump formed between the chip and the substrate and making direct contact with the substrate.
摘要:
An acoustic wave device includes: a substrate; a dielectric film formed on the substrate; opposing comb-shaped electrodes located between the substrate and the dielectric film, each of the opposing comb-shaped electrodes including an electrode finger, wherein at least one of the substrate and the dielectric film is a piezoelectric substance, an upper surface of the dielectric film, which is located above a gap between a tip of an electrode finger of one of the opposing comb-shaped electrodes and the other of the opposing comb-shaped electrodes, is inclined against an upper surface of the substrate in an extension direction of the electrode finger, and an inclination angle of the upper surface of the dielectric film against the upper surface of the substrate is equal to or larger than 30° and equal to or smaller than 50°.
摘要:
An electronic component module includes: a multi-layered wiring board formed by stacking insulating layers, an inner wiring layer formed between the insulating layers, and a surface wiring layer formed on an outermost insulating layer of the insulating layers; and an acoustic wave device located inside the multi-layered wiring board, wherein the acoustic wave device includes a functional element and a sealing portion, the functional element being located on a substrate and exciting an acoustic wave, and the sealing portion sealing the functional element so as to form an air-space above the functional element, and a terminal portion of the surface wiring layer does not overlap the air-space of the acoustic wave device as viewed from a stacking direction of the multi-layered wiring board, the terminal portion being a region to which a terminal of an electronic component is fixed in the surface wiring layer.
摘要:
An acoustic wave device includes: a substrate; a functional element that is located on the substrate and excites acoustic waves; a side wall portion that is made of a metal and is located on the substrate so as to surround the functional element; a metal plate that is located above the functional element and the side wall portion, and seals the functional element so that a space is formed above the functional element; and a terminal that is located on the substrate and further out than the side wall portion, and is electrically connected to the functional element.
摘要:
An acoustic wave device includes: a piezoelectric substrate of which four sides of an upper surface are approximate cleavage directions; and an electrode that is formed on the upper surface of the piezoelectric substrate, and excites an acoustic wave propagating in a direction different from the approximate cleavage directions.
摘要:
An acoustic wave device includes: a mounting substrate; a first wiring layer located on an upper surface of the mounting substrate, the first wiring layer including a first bond region and a first connection region connecting with the first bond region and having a thickness substantially equal to a thickness of the first bond region; an element substrate mounted on the mounting substrate; an acoustic wave element located on a lower surface of the element substrate; and a second wiring layer located on the lower surface of the element substrate, the second wiring layer including a second bond region and a second connection region, the second bond region directly bonding with the first bond region of the first wiring layer, the second connection region connecting the acoustic wave element with the second bond region and having a thickness substantially equal to a thickness of the second bond region.