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公开(公告)号:US12218015B2
公开(公告)日:2025-02-04
申请号:US17397989
申请日:2021-08-10
Inventor: Chansyun Yang , Chan-Lon Yang , Keh-Jeng Chang , Perng-Fei Yuh
IPC: H01L21/67 , G03F7/00 , H01L21/02 , H01L21/66 , H01L21/027
Abstract: An apparatus includes a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, and a machine learning device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result.
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公开(公告)号:US20220336294A1
公开(公告)日:2022-10-20
申请号:US17397989
申请日:2021-08-10
Inventor: Chansyun Yang , Chan-Lon Yang , Keh-Jeng Chang , Perng-Fei Yuh
IPC: H01L21/66 , G03F7/20 , H01L21/67 , H01L21/027
Abstract: An apparatus includes a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, and a machine learning device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result.
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公开(公告)号:US20240395637A1
公开(公告)日:2024-11-28
申请号:US18789686
申请日:2024-07-31
Inventor: Chansyun Yang , Chan-Lon Yang , Keh-Jeng Chang , Perng-Fei Yuh
IPC: H01L21/66 , G03F7/00 , H01L21/027 , H01L21/67
Abstract: A method for real-time compensation control of an etch process includes: providing a substrate having a layer in a process chamber; performing the etch process on the layer; directing one or more wavelengths to a region of the layer by a beam conditioning assembly; receiving one or more reflected wavelengths from the region of the layer; predicting a process variable by processing the one or more reflected wavelengths using a machine learning model; and comparing the predicted process variable with a predetermined process variable to obtain a comparison result.
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