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公开(公告)号：US20200004151A1
公开(公告)日：2020-01-02
申请号：US16366290
申请日：2019-03-27
发明人： Chien-Wei WANG , Ching-Yu CHANG , Shang-Wern CHANG , Yen-Hao CHEN
IPC分类号： G03F7/095 , G03F7/004 , G03F7/11 , G03F7/38 , H01L21/311
摘要： In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.
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公开(公告)号：US20230028006A1
公开(公告)日：2023-01-26
申请号：US17737810
申请日：2022-05-05
发明人： Yen-Hao CHEN , Wei-Han LAI , Ching-Yu CHANG
IPC分类号： G03F7/004 , G03F7/16 , H01L21/027
摘要： Novel photoresist additive compositions including developer solubility groups which enhance the solubility of the photoresist additive in a developer, such as a TMAH developer. The novel photoresist additive compositions also include functional groups to address outgassing and out-of-band issues.
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公开(公告)号：US20210271164A1
公开(公告)日：2021-09-02
申请号：US17168145
申请日：2021-02-04
发明人： Yen-Hao CHEN , Wei-Han LAI , Ching-Yu CHANG
IPC分类号： G03F7/039 , G03F7/40 , G03F7/038 , C08J3/24 , H01L21/027
摘要： Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1, x, y, and z all not 0 for same polymer. Crosslinker is monomer, oligomer, polymer including structures —B1-OH, —B2-ORa, —B3-NH2 —B4-NR2, B1, B2, B3, B4, and D each independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic group, chain, ring, 3-D structure; R2 and Ra are C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl.
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公开(公告)号：US20210198468A1
公开(公告)日：2021-07-01
申请号：US17098298
申请日：2020-11-13
发明人： Yen-Hao CHEN , Wei-Han LAI , Ching-Yu CHANG
摘要： Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer. The copolymer is A1 and A2 are independently direct link, C6-C15 phenyl group, C7-C15 benzyl group, C1-C15 alkyl group, C3-C15 cycloalkyl group, C1-C15 hydroxyalkyl group, C2-C15 alkoxy group, C3-C15 alkoxy alkyl group, C2-C15 acetyl group, C3-C15 acetyl alkyl group, C1-C15 carboxyl group, C2-C15 alkyl carboxyl group, C4-C15 cycloalkyl carboxyl group, C3-C15 saturated or unsaturated hydrocarbon ring, C2-C15 hetero chain, C3-C15 heterocyclic ring, or three dimensional ring structure; R1 is thermal or acid labile group including C4-C15 alkyl, cycloalkyl, hydroxyalkyl, alkoxy, or alkoxy alkyl group, or three dimensional ring structure; R2 is substituted or unsubstituted C4-C10 cycloalkyl group; Ra and Rb are independently H or CH3; and 0
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公开(公告)号：US20210159087A1
公开(公告)日：2021-05-27
申请号：US16697988
申请日：2019-11-27
发明人： Yen-Hao CHEN , Wei-Han LAI , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： H01L21/321 , H01L21/027 , H01L21/02
摘要： A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
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