公开(公告)号：US20190096804A1

公开(公告)日：2019-03-28

申请号：US16203632

申请日：2018-11-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin Huang ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Kuan-Chih Huang ,  Wei-Li Huang

IPC: H01L23/522 ,  H01L21/768 ,  H01L49/02 ,  H01L23/31

CPC classification number: H01L23/5227 ,  H01L21/76832 ,  H01L23/3171 ,  H01L28/10 ,  H01L2224/11

Abstract: Semiconductor devices and methods of forming the same are provided. One of the semiconductor devices comprises a conductive layer, a first dielectric layer disposed over the conductive layer, a magnetic layer disposed over the first dielectric layer, and a plurality of tantalum layers and a plurality of tantalum oxide layers alternately disposed between the magnetic layer and the first dielectric layer.

公开(公告)号：US20180350739A1

公开(公告)日：2018-12-06

申请号：US15798422

申请日：2017-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin Huang ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Kuan-Chih Huang ,  Wei-Li Huang

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/768

CPC classification number: H01L23/5227 ,  H01L21/76832 ,  H01L23/3171 ,  H01L28/10

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a conductive layer, a first dielectric layer, a magnetic layer and an etch stop stack. The first dielectric layer is disposed over the conductive layer. The magnetic layer is disposed over the first dielectric layer. The etch stop stack is disposed between the magnetic layer and the first dielectric layer. The etch stop stack includes a second dielectric layer and a plurality of unit layers between the second dielectric layer and the magnetic layer, and each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer on the tantalum layer.

公开(公告)号：US10510661B2

公开(公告)日：2019-12-17

申请号：US16203632

申请日：2018-11-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin Huang ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Kuan-Chih Huang ,  Wei-Li Huang

IPC: H01L23/522 ,  H01L21/768 ,  H01L49/02 ,  H01L23/31

Abstract: Semiconductor devices and methods of forming the same are provided. One of the semiconductor devices comprises a conductive layer, a first dielectric layer disposed over the conductive layer, a magnetic layer disposed over the first dielectric layer, and a plurality of tantalum layers and a plurality of tantalum oxide layers alternately disposed between the magnetic layer and the first dielectric layer.

公开(公告)号：US10163781B1

公开(公告)日：2018-12-25

申请号：US15798422

申请日：2017-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin Huang ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Kuan-Chih Huang ,  Wei-Li Huang

IPC: H01L23/522 ,  H01L21/768 ,  H01L49/02 ,  H01L23/31

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a conductive layer, a first dielectric layer, a magnetic layer and an etch stop stack. The first dielectric layer is disposed over the conductive layer. The magnetic layer is disposed over the first dielectric layer. The etch stop stack is disposed between the magnetic layer and the first dielectric layer. The etch stop stack includes a second dielectric layer and a plurality of unit layers between the second dielectric layer and the magnetic layer, and each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer on the tantalum layer.