公开(公告)号：US20160181251A1

公开(公告)日：2016-06-23

申请号：US14973649

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Ho YOO ,  Tae-jung PARK

IPC: H01L27/108 ,  H01L27/02 ,  H01L29/06 ,  G11C11/4091 ,  H01L23/528

CPC classification number: H01L29/0649 ,  G11C11/405 ,  G11C11/4091 ,  G11C11/565 ,  H01L27/108 ,  H01L27/10844 ,  H01L28/90

Abstract: A semiconductor device includes a first memory cell including a first transistor and a first capacitor, the first transistor comprising a first gate electrode, a first source, and a first drain; a second memory cell including a second transistor and the first capacitor, the second transistor comprising a second gate electrode, a second source, and a second drain; a first word line coupled to the first gate electrode; and a second word line coupled to the second gate electrode. The first capacitor is electrically connected between the first and second transistors.

Abstract translation: 半导体器件包括：第一存储单元，包括第一晶体管和第一电容器，第一晶体管包括第一栅电极，第一源极和第一漏极; 第二存储单元，包括第二晶体管和第一电容器，第二晶体管包括第二栅电极，第二源极和第二漏极; 耦合到所述第一栅电极的第一字线; 以及耦合到所述第二栅电极的第二字线。 第一电容器电连接在第一和第二晶体管之间。