公开(公告)号：US20230035899A1

公开(公告)日：2023-02-02

申请号：US17733051

申请日：2022-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun LEE ,  Suk Hoon KIM ,  Hyo-Sub KIM

IPC: H01L27/108

Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.

公开(公告)号：US20250071970A1

公开(公告)日：2025-02-27

申请号：US18942899

申请日：2024-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun LEE ,  Suk Hoon KIM ,  Hyo-Sub KIM

IPC: H10B12/00

Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.