LIGHT-EMITTING DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    LIGHT-EMITTING DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME 审中-公开
    发光装置包及其制造方法

    公开(公告)号:US20140014990A1

    公开(公告)日:2014-01-16

    申请号:US13835921

    申请日:2013-03-15

    Abstract: Lights-emitting device (LED) packages, and methods of manufacturing the same, include at least one light-emitting structure. The at least one light-emitting structure includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer that are sequentially stacked, at least one first metal layer connected to the first compound semiconductor layer, a second metal layer connected to the second compound semiconductor layer, a substrate having a conductive bonding layer on a first surface of the substrate, and a bonding metal layer configured for eutectic bonding between the at least one first metal layer and the conductive bonding layer.

    Abstract translation: 发光装置(LED)封装及其制造方法包括至少一个发光结构。 所述至少一个发光结构包括依次堆叠的第一化合物半导体层,有源层和第二化合物半导体层,连接到第一化合物半导体层的至少一个第一金属层,连接到第一化合物半导体层的第二金属层 所述第二化合物半导体层,在所述基板的第一表面上具有导电接合层的基板以及被配置为在所述至少一个第一金属层和所述导电接合层之间共晶接合的接合金属层。

    LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20140124818A1

    公开(公告)日:2014-05-08

    申请号:US13856716

    申请日:2013-04-04

    CPC classification number: H01L33/0079 H01L33/12

    Abstract: A light emitting device (LED) includes a stress control layer having a compressive stress on a substrate, a bonding layer on the stress control layer, a semiconductor layer on the bonding layer and including an active region for emitting light on the bonding layer, a first electrode on a lower surface of the substrate, and a second electrode on the semiconductor layer. The compressive stress of the stress control layer is between about 1 and about 20 GPa.

    Abstract translation: 发光器件(LED)包括在基板上具有压应力的应力控制层,应力控制层上的接合层,接合层上的半导体层,并且包括用于在接合层上发光的有源区, 在基板的下表面上的第一电极和在半导体层上的第二电极。 应力控制层的压缩应力在约1和约20GPa之间。

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