公开(公告)号：US11537041B2

公开(公告)日：2022-12-27

申请号：US16937266

申请日：2020-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulho Kim ,  Chorong Park ,  Soohan Kim ,  Junghoon Kim ,  Jeonghun Park

IPC: G03F1/42 ,  H01L21/66 ,  H01L21/027 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: forming a first outer box and a second outer box on a wafer, providing a photoresist layer on the wafer; and by removing a portion of the photoresist layer, forming a photoresist pattern including a first opening and a second opening that are horizontally apart from each other, wherein the first opening defines a first inner box superimposed on the first outer box in a plan view, the second opening defines a second inner box superimposed on the second outer box in the plan view, and a horizontal distance between the first opening and the second opening is about 150 μm to about 400 μm.

公开(公告)号：US20210132489A1

公开(公告)日：2021-05-06

申请号：US16937266

申请日：2020-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulho Kim ,  Chorong Park ,  Soohan Kim ,  Junghoon Kim ,  Jeonghun Park

IPC: G03F1/42 ,  H01L21/66 ,  H01L23/544 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device includes: forming a first outer box and a second outer box on a wafer, providing a photoresist layer on the wafer; and by removing a portion of the photoresist layer, forming a photoresist pattern including a first opening and a second opening that are horizontally apart from each other, wherein the first opening defines a first inner box superimposed on the first outer box in a plan view, the second opening defines a second inner box superimposed on the second outer box in the plan view, and a horizontal distance between the first opening and the second opening is about 150 μm to about 400 μm.