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公开(公告)号:US20240321805A1
公开(公告)日:2024-09-26
申请号:US18405791
申请日:2024-01-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seungho Hahn , Wooyoung Kim , Minwoo Rhee , Bumki Moon , Kyeongbin Lim
IPC: H01L23/00
CPC classification number: H01L24/27 , H01L2224/27614 , H01L2224/27616 , H01L2224/27848 , H01L2924/1434
Abstract: A method of manufacturing a semiconductor device includes preparing a first substrate and a second substrate respectively including a bonding layer having metal pads and a dielectric layer, performing a planarization process on a surface of the bonding layer of each of the first and second substrates, applying wet atomic layer etching to the surface of the bonding layer so that a surface of the metal pad is recessed to a target depth, and bonding the bonding layer of the first substrate to the bonding layer of the second substrate using an annealing process.