公开(公告)号：US11943926B2

公开(公告)日：2024-03-26

申请号：US17377869

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonseok Cho ,  Seulbi Lee

IPC: H10B43/30 ,  H01L21/762 ,  H01L25/065 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27 ,  H01L23/00

CPC classification number: H10B43/27 ,  H01L21/76232 ,  H01L25/0657 ,  H01L25/18 ,  H10B41/27 ,  H01L24/08 ,  H01L2224/08145

Abstract: A semiconductor device including a substrate; a horizontal conductive layer disposed on the substrate; a support layer disposed on the horizontal conductive layer; a stack structure including a plurality of gate electrodes, stacked to be spaced apart from each other in a direction perpendicular to an upper surface of the support layer, and a plurality of interlayer insulating layers stacked alternately with the plurality of gate electrodes; a channel structure penetrating through the stack structure; a separation structure penetrating through the horizontal conductive layer, the support layer, and the stack structure and extending in a first direction; and a conductive pattern disposed on a level between the horizontal conductive layer and a lowermost interlayer insulating layer, among the plurality of interlayer insulating layers, and protruding outwardly of the separation structure from a side surface of the separation structure.