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公开(公告)号：US20250164128A1
公开(公告)日：2025-05-22
申请号：US18825588
申请日：2024-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jisu LEE , Taeyong LEE , Heesoo JUNG , Euysung CHU , Younghoon KIM , Nakhyun KIM , Seongsu KIM , Mingi CHO
Abstract: An air purifying device includes a main body including: at least one filter unit including a filter, a blower unit including a blower, a main controller configured to control operation of the blower unit, a power supply configured to supply power to the main controller, and an output terminal configured to output power received from the power supply to outside, and at least one function module detachably assembled onto the main body and including a function unit including circuitry configured to perform a function of assisting the main body or a function different from a function of the main body, an auxiliary controller configured to control operation of the function unit, a connection terminal electrically connectable to the output terminal, and a second power supply configured to receive power separate from the power supplied to the power supply.
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公开(公告)号：US20180145613A1
公开(公告)日：2018-05-24
申请号：US15810679
申请日：2017-11-13
Inventor： Hyeonjin Shin , Sangwoo KIM , Seongsu KIM , Jihye KIM
IPC: H02N1/04
CPC classification number: H02N1/04
Abstract: A triboelectric generator includes a ferroelectric material layer and a protective layer provided over the ferroelectric material layer including first and second electrodes that are spaced apart from each other, a polarized ferroelectric material layer provided over the first electrode and configured to generate electrical energy by contact with another material, and a protective layer provided over the ferroelectric layer to prevent diffusion of charges generated on the ferroelectric layer.
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公开(公告)号：US20150194911A1
公开(公告)日：2015-07-09
申请号：US14593488
申请日：2015-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangwoo KIM , Keun Young LEE , Seongsu KIM , Juhyuck LEE
IPC: H02N1/04
Abstract: Provided is an electrostatic energy harvester Including a lower electrode; a ferroelectric material layer which is disposed on the lower electrode and formed of a poled ferroelectric material; a friction-charged body which is adapted to be repeatedly contacted with and separated from the ferroelectric material layer and has an electric susceptibility different from an electric susceptibility of the ferroelectric material layer; and an upper electrode provided on the friction-charged body.
Abstract translation: 提供一种静电收集器包括一个下电极; 铁电材料层，其设置在下电极上并由极化铁电材料形成; 摩擦带电体，其与所述铁电体层反复接触并分离，并且具有与所述铁电体层的电磁敏感性不同的电磁敏度; 以及设置在摩擦带电体上的上电极。
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公开(公告)号：US20240179899A1
公开(公告)日：2024-05-30
申请号：US18514158
申请日：2023-11-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseon KIM , Nakjin SON , Dongjin LEE , Junhee LIM , Seongsu KIM , Hanmin CHO , Chiwoong HAM
IPC: H10B41/41 , G11C16/04 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/27 , H10B43/35 , H10B43/40
CPC classification number: H10B41/41 , G11C16/0483 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/27 , H10B43/35 , H10B43/40
Abstract: A NAND flash device may include a peripheral circuit including a transistor, a substrate, and a device isolation region defining an active region of the substrate. The transistor may include a first gate structure on the active region. The transistor may include source and drain regions extending in a first direction in the active region on both sides of the first gate structure, which may include a first lightly-doped source and drain region adjacent to the first gate structure and a second lightly-doped source and drain region integrally connected thereto. The second lightly-doped source and drain region may be arranged farther from the first gate structure than the first lightly-doped source and drain region. The second lightly-doped source and drain region may have a smaller width in the second direction than a width of the first lightly-doped source and drain region in the second direction.
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