公开(公告)号：US08941140B2

公开(公告)日：2015-01-27

申请号：US13844632

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-wook Hwang ,  Seong-eun Park ,  Hun-jae Chung

IPC: H01L33/60 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/60 ,  H01L33/10

Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Abstract translation: 发光器件包括氮化物基半导体反射器。 发光装置包括氮化物类反射器和设置在氮化物类反射器上的发光单元。 基于氮化物的反射器包括交替层叠的未掺杂的氮化物半导体层和重掺杂的氮化物半导体层。 在其边缘蚀刻重掺杂的氮化物半导体层，以在相邻的未掺杂的氮化物半导体层之间形成空气层。