公开(公告)号：US20250163081A1

公开(公告)日：2025-05-22

申请号：US19029416

申请日：2025-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo Kim ,  Sunggi Kim ,  Yeonghun Kim ,  Samdong Lee ,  Sejin Jang ,  Gyuhee Park ,  Younjoung Cho ,  Byungkeun Hwang

IPC: C07F7/08 ,  H01L21/768

Abstract: Silicon compounds may be represented by the following formula: Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.

公开(公告)号：US20250157809A1

公开(公告)日：2025-05-15

申请号：US18934625

申请日：2024-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeun Kim ,  Seung-Min Ryu ,  Gyu-Hee Park ,  Joongjin Park ,  Sangick Lee ,  Sanghun Lee ,  Seunghyeon Lee ,  Sejin Jang ,  Youn Joung Cho

IPC: H01L21/02 ,  C07C319/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: A thin-film forming composition includes an aluminum compound represented by General Formula (1). In General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.