公开(公告)号：US10790147B2

公开(公告)日：2020-09-29

申请号：US15960583

申请日：2018-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee Lee ,  Se-Ran Oh ,  Hyun-Su Kim ,  Ik-Soo Kim ,  Seong-Gil Park ,  Geun-O Jeong

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/3215

Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.