公开(公告)号：US20240087856A1

公开(公告)日：2024-03-14

申请号：US18447479

申请日：2023-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon Son ,  Sunggil Kang ,  Kangmin Do ,  Youngsun Kim ,  Younghoo Kim ,  Sangjin An

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A substrate treating apparatus includes a process chamber configured to perform plasma treatment, a substrate support in a lower portion of the process chamber and configured to support a substrate, a showerhead in an upper portion of the process chamber and configured to supply a process gas for the plasma treatment toward the substrate, and a baffle surrounding the substrate support. The substrate support functions as a first electrode for generating plasma, the showerhead and the baffle function as a second electrode for generating the plasma, the baffle has a variable height, and an area of the second electrode varies as a height of the baffle varies.

公开(公告)号：US11289308B2

公开(公告)日：2022-03-29

申请号：US16860745

申请日：2020-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin An ,  Minseop Park ,  Chanyeong Jeong ,  Sunggil Kang ,  Yeongkwang Lee

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/683

Abstract: A substrate processing apparatus includes a process chamber including a plasma generation region configured to receive at least one first process gas and have first radio-frequency (RF) power applied thereto, to generate plasma; a gas distribution region configured to supply the at least one first process gas to the plasma generation region; a gas mixing region configured to receive at least one second process gas and radicals generated in the plasma generation region to generate an etchant based on the radicals being mixed with the at least one second process gas; a pedestal on which a substrate is disposed; a processing region in which the pedestal is installed; and a shower head configured to supply the etchant from the gas mixing region to the processing region, the substrate disposed on the pedestal being processed by the etchant. The gas mixing region is separate from each of the plasma generation region and the processing region.

公开(公告)号：US20240282586A1

公开(公告)日：2024-08-22

申请号：US18640481

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanyeong Jeong ,  Hoseop Choi ,  Sunggil Kang ,  Dongkyu Shin ,  Sangjin An

IPC: H01L21/324 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01J37/321 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

公开(公告)号：US11990348B2

公开(公告)日：2024-05-21

申请号：US17184279

申请日：2021-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanyeong Jeong ,  Hoseop Choi ,  Sunggil Kang ,  Dongkyu Shin ,  Sangjin An

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01J37/321 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.