公开(公告)号：US20250165693A1

公开(公告)日：2025-05-22

申请号：US18752925

申请日：2024-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul YEO ,  Jaewon YANG ,  Seungju SHIN

IPC: G06F30/392

Abstract: Provided is a mask layout design method including acquiring a plurality of unique patterns, clustering and sampling the plurality of unique patterns, and inspecting the plurality of unique patterns which have been clustered and sampled, wherein the clustering and sampling of the plurality of unique patterns is performed based on symmetry of the plurality of unique patterns.

公开(公告)号：US20230197460A1

公开(公告)日：2023-06-22

申请号：US18072998

申请日：2022-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon YANG ,  Seongjin PARK ,  Sangchul YEO ,  Seonmin RHEE ,  Hyeok LEE ,  Sooryong LEE ,  Seungju HAN

IPC: H01L21/308 ,  G06T3/40 ,  G06V10/46 ,  G06V10/82 ,  G03F7/20

CPC classification number: H01L21/308 ,  G03F7/70616 ,  G06T3/4007 ,  G06V10/46 ,  G06V10/82

Abstract: A semiconductor device patterning method includes generating an input image by imaging information about a pattern of a sample, acquiring an output image of the pattern of the sample after a preset semiconductor process with respect to the sample, generating a predictive model through learning using a Deep Neural Network (DNN) with the input image and the output image, and predicting a pattern image after the semiconductor process for a pattern of a semiconductor device by using the predictive model.

公开(公告)号：US20240413024A1

公开(公告)日：2024-12-12

申请号：US18532473

申请日：2023-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul YEO ,  Doyun KIM ,  Jaewon YANG

IPC: H01L21/66 ,  G03F1/36 ,  G06T7/00 ,  G06T7/11

Abstract: Provided is a pattern inspection method including obtaining an image of a substrate on which a pattern is formed, extracting a contour based on the image, detecting positions of a target pattern based on the contour, generating pattern inspection data by performing a curve-fitting on the detected positions of the target pattern, and analyzing the pattern based on the pattern inspection data, wherein the curve-fitting is performed by using at least one of a Sigmoid function, a hyperbolic tangent function, and a Fermi-Dirac function, and wherein the pattern inspection data includes a width in a first direction, a height in a second direction, and a pattern slope of the target pattern.

公开(公告)号：US20230280646A1

公开(公告)日：2023-09-07

申请号：US17972231

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungsoo KIM ,  Sooryong LEE ,  Jaewon YANG ,  Sangchul YEO ,  Hyeok LEE

IPC: G03F1/36 ,  G03F1/80 ,  G03F7/20

CPC classification number: G03F1/36 ,  G03F1/80 ,  G03F7/705

Abstract: The inventive concept provides a corner rounding method of a deep learning-based optical proximity correction (OPC) pattern by which patterning reliability may be ensured, and an OPC method and a mask manufacturing including the corner rounding method. The corner rounding method of a deep learning-based OPC pattern includes: obtaining a contour of a photoresist (PR) pattern or an etching pattern on a wafer; obtaining a square layout of the PR pattern or the etching pattern corresponding to the contour; generating a transform model through deep learning with the square layout and the contour; and obtaining a rounded layout target with respect to a square layout target by using the transform model.