Abstract:
A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.
Abstract:
Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.
Abstract:
A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1. Hf3Te2-xAx [Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0
Abstract:
According to example embodiments, a transparent electrically conductive film including a compound that has a two-dimensional electron gas layer, and has a product of an absorption coefficient (α) for light having a wavelength of about 550 nm at 25° C. and a resistivity value (ρ) thereof of less than or equal to about 30 Ω/sq is provided. The electrically conductive film may be a layered crystal structure of the compound.