公开(公告)号：US20200304742A1

公开(公告)日：2020-09-24

申请号：US16898870

申请日：2020-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-bin YUN ,  Kyung-ho LEE

IPC: H04N5/376 ,  H04N9/04 ,  H04N9/07 ,  H01L27/146 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

公开(公告)号：US20140327051A1

公开(公告)日：2014-11-06

申请号：US14168657

申请日：2014-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-chak AHN ,  Yi-tae KIM ,  Eun-sub SHIM ,  Kyung-ho LEE

IPC: H01L27/148 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor may include a photo detecting device and a charge storage device. The image sensor may further include a trench and a shield which blocks light from being absorbed by the charge storage device. The charge storage device may temporarily store accumulated charges by the photo detecting device.

Abstract translation: 提供了图像传感器和图像传感器的制造方法。 图像传感器可以包括光检测装置和电荷存储装置。 图像传感器还可以包括阻挡光被电荷存储装置吸收的沟槽和屏蔽物。 电荷存储装置可以临时存储光检测装置的累积电荷。