公开(公告)号：US20240087856A1

公开(公告)日：2024-03-14

申请号：US18447479

申请日：2023-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon Son ,  Sunggil Kang ,  Kangmin Do ,  Youngsun Kim ,  Younghoo Kim ,  Sangjin An

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A substrate treating apparatus includes a process chamber configured to perform plasma treatment, a substrate support in a lower portion of the process chamber and configured to support a substrate, a showerhead in an upper portion of the process chamber and configured to supply a process gas for the plasma treatment toward the substrate, and a baffle surrounding the substrate support. The substrate support functions as a first electrode for generating plasma, the showerhead and the baffle function as a second electrode for generating the plasma, the baffle has a variable height, and an area of the second electrode varies as a height of the baffle varies.