公开(公告)号：US20250107282A1

公开(公告)日：2025-03-27

申请号：US18897838

申请日：2024-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Joohun Han

IPC: H01L33/20 ,  H01L25/16 ,  H01L33/00 ,  H01L33/32 ,  H01L33/50

Abstract: A nanorod light-emitting device includes an n-type semiconductor layer, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer on the active layer, and the n-type semiconductor layer includes a core rod, a plurality of nano pores opened in an outward direction from the core rod, and a plurality of quantum dots dispersed in the plurality of nano pores.

公开(公告)号：US12249671B2

公开(公告)日：2025-03-11

申请号：US17582172

申请日：2022-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han ,  Kiho Kong ,  Junghun Park

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

公开(公告)号：US12034032B2

公开(公告)日：2024-07-09

申请号：US18308895

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Nakhyun Kim ,  Junghun Park

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US11776988B2

公开(公告)日：2023-10-03

申请号：US17227981

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US11688827B2

公开(公告)日：2023-06-27

申请号：US17106515

申请日：2020-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/16 ,  H01L29/06 ,  H01L33/32 ,  H01L25/075 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L25/167 ,  H01L29/0676 ,  H01L33/32 ,  H01L33/44

Abstract: A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED, a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.

D1=D−(2×L1×tan β)  

公开(公告)号：US20220271210A1

公开(公告)日：2022-08-25

申请号：US17743028

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjo Park ,  Joohun Han

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US20220109021A1

公开(公告)日：2022-04-07

申请号：US17207105

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi

IPC: H01L27/15 ,  H01L33/00 ,  G09G3/32 ,  H01L33/62 ,  H01L33/38

Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.

公开(公告)号：US11056473B2

公开(公告)日：2021-07-06

申请号：US16670457

申请日：2019-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Junhee Choi ,  Euijoon Yoon

IPC: H01L33/50 ,  H01L33/48 ,  H01L25/16 ,  H01L27/12

Abstract: Provided are a micro light source array for a display device, a display device including the micro light source array, and a method of manufacturing the display device. The micro light source array includes: a plurality of silicon sub-mounts provided on a substrate, each silicon sub-mount from among the plurality of silicon sub-mounts corresponding to a respective sub-pixel from among a plurality of sub-pixels of a display device, the plurality of silicon sub-mounts being separated from each other by a plurality of trenches; a plurality of light emitting device chips coupled to the plurality of silicon sub-mounts; and a plurality of driving circuits provided at the plurality of silicon sub-mounts.

公开(公告)号：US20200168663A1

公开(公告)日：2020-05-28

申请号：US16589359

申请日：2019-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhee Choi ,  Sungjin Kang ,  Kiho Kong ,  Junghun Park ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang

IPC: H01L27/15 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60 ,  H01L33/00

Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

公开(公告)号：US12148859B2

公开(公告)日：2024-11-19

申请号：US18144566

申请日：2023-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik Hwang ,  Sungjin Kang ,  Kyungwook Hwang ,  Junhee Choi

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/38 ,  H01L33/62

Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.