公开(公告)号：US20230352510A1

公开(公告)日：2023-11-02

申请号：US18164228

申请日：2023-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghye Kim ,  Donghyun Kim ,  Sung In Kim ,  Kyoungeun Chang ,  Jae Ho Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.

公开(公告)号：US20240243151A1

公开(公告)日：2024-07-18

申请号：US18410884

申请日：2024-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghye Kim ,  Gilwoo Kong ,  Donghyun Kim ,  Sungin Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H04N25/77

Abstract: An image sensor includes a substrate and first and second shared pixels, which extend adjacent to each other in a first direction across the substrate. Each of the shared pixels includes: a plurality of floating diffusion regions at spaced apart locations within the substrate, and a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions. A deep trench isolation structure is provided, which extends within the substrate and at least partially partitions the first and second shared pixels from each other. A contact barrier structure is provided, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between the source follower gate of the first shared pixel and the source follower gate of the second shared pixel.

公开(公告)号：US20250169219A1

公开(公告)日：2025-05-22

申请号：US18950343

申请日：2024-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghye Kim ,  Donghyun Kim ,  Sungin Kim

IPC: H01L27/146 ,  H01L27/02

Abstract: An image sensor includes a substrate including a pixel region, a through electrode region, and a power supply region between the pixel region and the through electrode region, through electrodes in the through electrode region, shared pixels separated from each other by a first trench isolation structure in the pixel region and each shared pixel including unit pixels, wherein the first trench isolation structure extends in the substrate in a vertical direction, contact barriers arranged between the shared pixels and vertically overlapping the first trench isolation structure, and a protection diode arranged in the power supply region, including a first impurity region where first power is supplied by any one of the through electrodes, and electrically connected to the contact barriers.