公开(公告)号：US20240387608A1

公开(公告)日：2024-11-21

申请号：US18444322

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jongyeong Min ,  Jiye Baek ,  Joonsuk Park ,  Yeseul Lee ,  Jinwook Lee

IPC: H01L27/08

Abstract: A capacitor may include a primary lower electrode, an interface structure on a surface of the primary lower electrode, a primary dielectric layer including a metal oxide on the interface structure, the primary dielectric layer, and an upper electrode on the primary dielectric layer. The interface structure may include a first interface layer, a second interface layer, and a third interface layer. The first interface layer may have electrical conductivity, and may include a metal oxide doped with a pentavalent element. The second interface layer may be on the first interface layer, and may include a material further doped with nitrogen in the material of the first interface layer. The third interface layer may be on the second interface layer, and may include a metal oxide doped with nitrogen. A metal included in the metal oxide of the third interface layer may include a tetravalent metal.

公开(公告)号：US12199138B2

公开(公告)日：2025-01-14

申请号：US17941688

申请日：2022-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak Jeon ,  Jiye Baek ,  Hanjin Lim

IPC: H10B12/00 ,  H01L49/02

Abstract: A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.

公开(公告)号：US20240387612A1

公开(公告)日：2024-11-21

申请号：US18633456

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jongyeong Min ,  Joonsuk Park ,  Jiye Baek ,  Yeseul Lee ,  Jinwook Lee

IPC: H10B12/00 ,  C23C16/34

Abstract: A semiconductor device may include a substrate and a capacitor on the substrate. The capacitor may include a lower electrode, a dielectric layer on the lower electrode, a first upper electrode on the dielectric layer, and a second upper electrode on the first upper electrode. The dielectric layer may include a metal oxide. The first upper electrode may include a metal nitride further including a first material having a work function of 4.8 eV or more. The second upper electrode may include the first material.