公开(公告)号：US09951422B2

公开(公告)日：2018-04-24

申请号：US15285926

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaechul Shin ,  JongCheol Lee ,  Geunkyu Choi ,  MinHwa Jung ,  Sukjin Chung

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67253

Abstract: A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

公开(公告)号：US20170218515A1

公开(公告)日：2017-08-03

申请号：US15285926

申请日：2016-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaechul Shin ,  JongCheol Lee ,  Geunkyu Choi ,  MinHwa Jung ,  Sukjin Chung

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/52 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67253

Abstract: A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

公开(公告)号：US20170121820A1

公开(公告)日：2017-05-04

申请号：US15289619

申请日：2016-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  JongCheol Lee ,  MinHwa Jung ,  Jaechul Shin ,  In-Sun Yi ,  Geunkyu Choi ,  Jungil Ahn ,  Seung Han Lee ,  Jin Pil Heo

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.