公开(公告)号：US12074011B2

公开(公告)日：2024-08-27

申请号：US17356998

申请日：2021-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiye Kim ,  In Cheol Song ,  Woongpil Jeon ,  Daihong Kim ,  Jaebeom Park ,  Byungho Chun

IPC: H01J37/32 ,  C23C16/505 ,  H05K9/00

CPC classification number: H01J37/32449 ,  C23C16/505 ,  H01J37/32082 ,  H05K9/0081 ,  H01J2237/3321

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.

公开(公告)号：US10465290B2

公开(公告)日：2019-11-05

申请号：US15469212

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjong Kim ,  Seonggil Park ,  Jaebeom Park ,  Jung-soo Yoon ,  Keeyoung Jun ,  Choongrae Cho ,  Jongwon Hong

IPC: C23C16/50 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.