公开(公告)号：US20250169066A1

公开(公告)日：2025-05-22

申请号：US18826334

申请日：2024-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daesun Kim ,  Suklae Kim ,  Cheonbae Kim ,  Youngseok Park ,  Taejin Park ,  Hyunchul Yoon ,  Hyeonkyu Lee ,  Sungsoo Yim ,  Hyungeun Choi

IPC: H10B12/00 ,  G11C11/408 ,  G11C11/4091 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: Provided is a semiconductor device. The semiconductor device includes: a first connection region, a first memory block region, and a second connection region sequentially arranged; a first peripheral circuit region vertically overlapping with the first memory block region; first memory cells in the first memory block region; a first word line extending into the first and second connection regions by crossing the first memory block region, and electrically connected to the first memory cells; a first sub-word line driver in the first peripheral circuit region; and a first word line signal path electrically connecting the first word line and the first sub-word line driver. The first word line signal path includes at least one first routing contact coupled to the first word line in the first connection region, and at least one second routing contact coupled to the first word line in the second connection region.

公开(公告)号：US20250133729A1

公开(公告)日：2025-04-24

申请号：US18668696

申请日：2024-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Park ,  Kyusul Park ,  Sungsoo Yim ,  Taeha Suh ,  Hyeonkyu Lee

IPC: H10B12/00

Abstract: A semiconductor memory device includes a conductive line extending in a first direction, channel regions spaced apart from each other in the first direction over the conductive line and each electrically connected to the conductive line, a back gate electrode spaced apart from the conductive line in a third direction and extending in a second direction between first and second channel regions selected from the channel regions, a pair of word lines spaced apart from each other in the first direction and between the second and third channel regions selected from the channel regions, and epitaxial direct contact plugs extending in the third direction between the channel regions and the conductive line and each including a contact surface contacting one of the channel regions, a protruding contact portion at least partially surrounded by the conductive line, and a vertical contact portion between the contact surface and the protruding contact portion.

公开(公告)号：US20250040126A1

公开(公告)日：2025-01-30

申请号：US18670805

申请日：2024-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Kim ,  Taejin Park ,  Kyuchang Kang ,  Hyeonkyu Lee ,  Sungsoo Yim

IPC: H10B12/00

Abstract: A semiconductor device includes a lower circuit pattern, a bit line shield structure, a first insulating interlayer, a bit line structure, a first contact plug, a channel and a capacitor. The lower circuit pattern is on a substrate. The bit line shield structure is on the lower circuit pattern. The first insulating interlayer is in an opening extending through the bit line shield structure. The bit line structure is on the bit line shield structure, and at least partially overlaps the bit line shield structure in a vertical direction substantially perpendicular to an upper surface of the substrate. The first contact plug extends through the first insulating interlayer to contact the bit line structure, and is electrically connected to the lower circuit pattern. The channel is on the bit line structure. The capacitor is on the channel and is electrically connected to the channel.