公开(公告)号：US20230295908A1

公开(公告)日：2023-09-21

申请号：US18322355

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Min KIM ,  Haesick SUL ,  Sunyood KANG ,  Yungong KIM ,  Seongnam-si SUH ,  Hyeongji LEE ,  Yunhwan JUNG

IPC: E03C1/086

CPC classification number: E03C1/086

Abstract: Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.