公开(公告)号：US20250004361A1

公开(公告)日：2025-01-02

申请号：US18437779

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Cho ,  Hun Kang ,  Sangwook Kim ,  Useong Kim ,  Heungsuk Oh ,  Hee-Jun Lee ,  Jeeeun Jung

IPC: G03F1/36

Abstract: Disclosed are semiconductor fabrication methods and optical proximity correction (OPC) methods. The semiconductor fabrication method comprises performing OPC on a design pattern of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout. Performing the OPC includes generating shape points on a contour of the design pattern, producing a hash value of the shape point, selecting a first unique shape point that represents first shape points, determining a first correction bias of the first unique shape point, and creating a correction pattern by applying the first correction bias in common to the first shape points. Producing the hash value includes generating a query range around a target shape point and, based on geometry analysis in the query range, producing the hash value.