公开(公告)号：US20230282453A1

公开(公告)日：2023-09-07

申请号：US17951636

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： HAKYOUNG KIM ,  MINYOUNG HUR ,  Sumin PARK ,  Daehyun LEE

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32532 ,  H01L21/6833

Abstract: Disclosed are substrate processing apparatuses and methods. The substrate processing apparatus comprises a chuck that supports a substrate, an insulator ring that surrounds the chuck, a focus ring on the insulator ring, and a ground ring outside the insulator ring. The ground ring includes a ground ring body and an extension ring on the ground ring body. A width of the extension ring is less than that of the ground ring body. An inner lateral surface of the extension ring is more outwardly than that of the ground ring body. A difference in level between a top of the extension ring and a top surface of the chuck is in a range of about 52 mm to about 60 mm.

公开(公告)号：US20230245864A1

公开(公告)日：2023-08-03

申请号：US17963704

申请日：2022-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： HAKYOUNG KIM ,  DOWON KIM ,  JISOO IM ,  YOUNGJIN NOH ,  Chulwoo PARK ,  MINYOUNG HUR

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/32642 ,  H01J2237/334

Abstract: Disclosed are plasma baffles, substrate processing apparatuses, and substrate processing methods. The plasma baffle comprises a lower ring, an upper ring outside the lower ring in a plan view and extending vertically, and an intermediate ring that extends from the lower ring to the upper ring to form an acute angle with respect to a horizontal direction. The lower ring includes a lower central hole that vertically penetrates a center of the lower ring, and a plurality of lower slits outside the lower central hole and vertically penetrating the lower ring. The intermediate ring provides an intermediate slit that connects an inner lateral surface of the intermediate ring to an outer lateral surface of the intermediate ring. An area ratio of the plurality of lower slits to the lower ring is equal to or greater than about 59%.

公开(公告)号：US20230187185A1

公开(公告)日：2023-06-15

申请号：US17948943

申请日：2022-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUMIN PARK ,  SUNGHWAN KIM ,  HAKYOUNG KIM ,  DAEHYUN LEE ,  DONGYUN YEO ,  MINYOUNG HUR

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32082 ,  H01J2237/327

Abstract: A plasma battle includes a lower ring and an upper ring that extends upwardly from an edge of the lower ring. The lower ring includes a lower central hole on a center of the lower ring and vertically penetrating the lower ring and a lower slit outside the lower central hole and vertically penetrating the lower ring. The upper ring includes an upper central hole on a center of the upper ring and vertically penetrating the upper ring and an upper slit that penetrates the upper ring so as to connect an inner lateral surface of the upper ring to an outer lateral surface of the upper ring.