IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20180301487A1

    公开(公告)日:2018-10-18

    申请号:US15804183

    申请日:2017-11-06

    Abstract: An image sensor includes first photoelectric elements, second photoelectric elements under the first photoelectric elements, and a pixel circuit including first semiconductor devices and second semiconductor devices under second photoelectric elements. The first semiconductor devices are connected to at least one of the first photoelectric elements. The second semiconductor devices are connected to at least one of the second photoelectric elements. The first semiconductor devices are connected to different first photoelectric elements and are in one of a plurality of pixel regions.

    UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR HAVING THE SAME
    3.
    发明申请
    UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR HAVING THE SAME 审中-公开
    图像传感器和图像传感器的单元像素

    公开(公告)号:US20150029365A1

    公开(公告)日:2015-01-29

    申请号:US14340703

    申请日:2014-07-25

    CPC classification number: H04N9/045 H01L27/14665 H04N5/37452 H04N5/37457

    Abstract: A unit pixel is provided. The unit pixel includes photoelectric converters stacked on each other and configured to generate photo-charges in response to light signals within respective wavelength ranges and provide the photo-charges to respective storage nodes; memories configured to concurrently receive and store the photo-charges from the respective storage nodes in response to a common control signal; and a signal generator that generates analog signals based on the photo-charges stored in the memories, respectively.

    Abstract translation: 提供单位像素。 单位像素包括彼此堆叠并被配置为响应于各个波长范围内的光信号而产生光电荷的光电转换器,并且向相应的存储节点提供光电荷; 存储器,被配置为响应于公共控制信号同时从各个存储节点接收和存储光电费; 以及分别基于存储在存储器中的光电荷产生模拟信号的信号发生器。

    IMAGE SENSORS
    6.
    发明申请
    IMAGE SENSORS 审中-公开

    公开(公告)号:US20180190708A1

    公开(公告)日:2018-07-05

    申请号:US15641423

    申请日:2017-07-05

    Abstract: An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.

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