公开(公告)号：US20220115531A1

公开(公告)日：2022-04-14

申请号：US17556001

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOJIN JEONG ,  Dong IL BAE ,  Geumjong Bae ,  Seungmin Song ,  Junggil Yang

IPC: H01L29/78 ,  H01L27/06 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.