Abstract:
A method of fabricating a semiconductor device comprises loading a circuit board including a semiconductor chip into underfill equipment, positioning the circuit board on a depositing chuck of the underfill equipment, filling an underfill material in a space between the semiconductor chip and the circuit board placed on the depositing chuck; transferring the circuit board including the underfill material so that it is positioned on a post-treatment chuck of the underfill equipment; heating the underfill material of the circuit board placed on the post-treatment chuck in a vacuum state, and unloading the circuit board, of which the underfill material has been heated in the vacuum state, from the underfill equipment.
Abstract:
A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.
Abstract:
A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.