公开(公告)号：US20220223604A1

公开(公告)日：2022-07-14

申请号：US17469349

申请日：2021-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanyeol PARK ,  Hwanwoo KIM ,  Jongkyu LEE ,  Chulhwan CHOI

IPC: H01L27/108 ,  H01L25/065

Abstract: A semiconductor structure of the inventive concepts includes a chip region comprising a plurality of semiconductor chips on the substrate; and a peripheral region at a periphery of the chip region, the peripheral region including a mold structure. The mold structure may include a base mold layer on the substrate, and a composite mold layer on the base mold layer, the composite mold layer comprising at least one bowing sacrificial layer and at least one bowing prevention layer.