公开(公告)号：US09865635B2

公开(公告)日：2018-01-09

申请号：US15408085

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyuk Park ,  Seungwon Cha ,  Cheolju Kang ,  Yitae Kim ,  Jongeun Park ,  Jungchak Ahn ,  Yujung Choi

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.