公开(公告)号：US11081338B2

公开(公告)日：2021-08-03

申请号：US16791189

申请日：2020-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo Kim ,  Haeryong Kim ,  Seungmin Ryu ,  Sunmin Moon ,  Jeonggyu Song ,  Changsu Woo ,  Kyooho Jung ,  Younjoung Cho

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US11728160B2

公开(公告)日：2023-08-15

申请号：US17376403

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo Kim ,  Haeryong Kim ,  Seungmin Ryu ,  Sunmin Moon ,  Jeonggyu Song ,  Changsu Woo ,  Kyooho Jung ,  Younjoung Cho

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0228

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.